Fabrication of p-type thin film transistor by molecular precursor method

2016 Fiscal Year Final Research Report

• Project/Area Number: 26810130
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Device related chemistry
• Research Institution: Kogakuin University
• Principal Investigator: NAGAI HIROKI 工学院大学, 先進工学部, 助教 (20559942)
• Co-Investigator(Renkei-kenkyūsha): WATANABE Yasuyuki 諏訪東京理科大学, 工学部, 教授 (10339129)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 分子プレカーサー法 / 薄膜 / トランジスタ / p型半導体 / 金属酸化物

Outline of Final Research Achievements

Cuprous oxide is widely been researched and applied as p-type TFT, solar cell, photocatalyst and so on. Recently, the pure cuprous oxide thin-films were fabricated by heat treating of precursor films involving Cu(II) complexes, through the molecular precursor method developed by us. In this study, the precursor solution including Cu(II) complex with ligand of EDTA and propylamine were prepared. The precursor films were fabricated by spin-coating the precursor solution onto silicon substrate and pre-heating at 70°C in air for 10 min. The precursor films were heated at 450°C for 30 min in argon. The XRD pattern of the resultant thin film is assignable to cuprous oxide, including slight amounts of CuO and Cu. It showed a low on-off current rate, the current (ID) increases by the gate bias (VG) decreasing. Moreover, ID showed the region changing from linear to saturation while continuously increased the VDS. These results indicate that the devices work as a p-type TFT.

Free Research Field

ナノ材料化学