Development of terahertz-wave emitter and detector excited by optical light source with a wavelength at optical waveband region using dilute bismuthide semiconductors

2015 Fiscal Year Final Research Report

• Project/Area Number: 26820114
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Hiroshima University
• Principal Investigator: Tominaga Yoriko 広島大学, 先端物質科学研究科, 助教 (40634936)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 低温成長GaAs系半導体 / 分子線エピタキシャル成長 / X線回折法 / 透過型電子顕微鏡 / ラザフォード後方散乱法 / テラヘルツ電磁波 / 光伝導アンテナ

Outline of Final Research Achievements

The final goal of this study is realization of photoconductive antenna excited by optical light source with a wavelength at optical waveband region using dilute bismuthide (Bi-) semiconductors. In this study period, a Bi Knudsen cell was installed into a molecular beam epitaxial (MBE) growth machine in this researcher's group, and growth temperature dependence of crystalline state of low-temperature-grown (LTG) InGaAs was revealed for comparison of the case of LTG Bi-semiconductors. The results of this study provided guidelines for optimized MBE growth condition of LTG Bi-semiconductors.

Free Research Field

電子・電気材料工学