2015 Fiscal Year Annual Research Report
電子線誘起電流法によってSrTiO3結晶中の転位の電気特性評価
| Project/Area Number |
26820120
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
陳 君 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス拠点, MANA研究員 (90537739)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Keywords | SrTiO3 / Nb doping / Dislocation |
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| Outline of Annual Research Achievements |
During the second fiscal year, we have focused on the effect of Nb doping on the resistive switching. The switching behaviors in Nb-doped SrTiO3 were investigated. Either oxygen vacancies or dislocations would affect the switching depending on doping level. The number and interaction of dislocations increased rapidly under high doping as revealed by TEM observation.
The Nb-doped SrTiO3 showed interesting resistive switching phenomena, which could be modulated by either thermal treatment or doping level. The impacts of oxygen vacancies and dislocations on resistive switching were investigated by comparing the switching behaviors of as-prepared and air-annealed crystals with a variety of doping levels. It was found that both oxygen vacancies and dislocations may have effects on the switching depending on the doping level. It was dominated by oxygen vacancies for low doping and dislocations for high doping. This work has been accepted by "Superlattices and Microstructures" and available online: http://dx.doi.org/10.1016/j.spmi.2016.03.013 (DOI information: 10.1016/j.spmi.2016.03.013)
On the other hand, we also tried to correlate the strain distribution versus Nb-doping. We have succeeded to measure the residual strain in SrTiO3. It is suggested that residual strain is not directly related with resistive switching.
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