原子レベル平坦界面トランジスタによる電気的特性ばらつき・ノイズの極小化

2015 Fiscal Year Annual Research Report

• Project/Area Number: 26820121
• Research Institution: Tohoku University
• Principal Investigator: 黒田 理人 東北大学, 工学(系)研究科(研究院), 准教授 (40581294)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 電子デバイス・機器 / 電子デバイス・集積回路 / しきい値ばらつき / ランダムテレグラフノイズ / 原子レベル平坦化

Outline of Annual Research Achievements

平成26年度にはゲート絶縁膜／Si界面の原子レベル平坦化技術を大規模集積回路製造工程に導入するために2種類の方針に基づくプロセス技術を開発した。平成27年度には、本プロセス技術を従来の半導体生産工場へ適用する際に新規に導入する工程数が少ない、Si表面の原子レベル平坦化プロセスをゲート絶縁膜形成直前に導入する方針において、最小加工寸法0.22umのプロセステクノロジをベースとしてSi表面原子レベル平坦化のための高純度アルゴン雰囲気下における熱処理プロセスの温度・ガス流量等のプロセス条件の最適化を行った。その結果、熱処理温度を800℃とすることで、直径200mm全面において平坦化の効果の1つであるゲート絶縁膜の破壊耐圧・寿命の向上がばらつき少なく得られることを明らかにした。また、製造後の微細トランジスタのゲート絶縁膜／Si界面の平坦性を原子間力顕微鏡を用いて測定した結果、原子ステップ・テラスから構成される原子レベル平坦性が得られていることを確認した。以上から、大口径ウェハ用いた大規模集積回路製造工程に原子レベル平坦化技術を導入することが出来たことを実証した。さらに大規模アレイテスト回路を用いて100万個を超える測定対象トランジスタ郡のランダムテレグラフノイズを統計的に測定・解析した結果、従来の平坦性を有する素子と比べて原子レベル平坦性を有する素子においては、ゲート絶縁膜中のトラップによるキャリアの捕獲・放出に起因するノイズ振幅が小さいことが明らかになった。この結果は平坦性の向上によりMOSトランジスタのゲート絶縁膜／Si界面のポテンシャルのばらつきが抑制された効果を示すものであり、平坦化によるノイズ抑制の効果を実験的に実証すると共に、低減メカニズムを理論的に明らかにすることができた。

Research Products

• [Journal Article] Analysis and reduction of leakage current of 2 kV monolithic isolator with wide trench spiral isolation structure (2016)
  • Author(s): Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Pages: 04EF07-1-5
  • DOI: 10.7567/JJAP.55.04EF07
  • Peer Reviewed
• [Journal Article] Analysis and Reduction Technologies of Floating Diffusion Capacitance in CMOS Image Sensor for Photon-Countable Sensitivity (2016)
  • Author(s): Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda, Shigetoshi Sugawa
  • Journal Title: ITE Transactions on Media Technology and Applications Volume: 4 Pages: 91-98
  • DOI: 10.3169/mta.4.91
  • Peer Reviewed / Open Access
• [Journal Article] Floating Capacitor Load Readout Operation for Small, Low Power Consumption and High S/N Ratio CMOS Image Sensors (2016)
  • Author(s): Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa
  • Journal Title: ITE Transactions on Media Technology and Applications Volume: 4 Pages: 99-108
  • DOI: 10.3169/mta.4.99
  • Peer Reviewed / Open Access
• [Journal Article] A High Quantum Efficiency High Readout Speed 1024 Pixel Ultraviolet-Visible-Near Infrared Waveband Photodiode Array (2016)
  • Author(s): Rihito Kuroda, Takahiro Akutsu, Yasumasa Koda, Kenji Takubo, Hideki Tominaga, Ryuta Hirose, Tomohiro Karasawa, Shigetoshi Sugawa
  • Journal Title: ITE Transactions on Media Technology and Applications Volume: 4 Pages: 109-115
  • DOI: 10.3169/mta.4.109
  • Peer Reviewed / Open Access
• [Journal Article] A CMOS Image Sensor with 240 μV/e- Conversion Gain, 200 ke- Full Well Capacity, 190-1000 nm Spectral Response and High Robustness to UV light (2016)
  • Author(s): Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa
  • Journal Title: ITE Transactions on Media Technology and Applications Volume: 4 Pages: 116-122
  • DOI: 10.3169/mta.4.116
  • Peer Reviewed / Open Access
• [Journal Article] A 20Mfps Global Shutter CMOS Image Sensor with Improved Light Sensitivity and Power Consumption Performances (2016)
  • Author(s): Rihito Kuroda, Yasuhisa Tochigi, Ken Miyauchi, Tohru Takeda, Hidetake Sugo, Fan Shao, Shigetoshi Sugawa
  • Journal Title: ITE Transactions on Media Technology and Applications Volume: 4 Pages: 149-154
  • DOI: 10.3169/mta.4.149
  • Peer Reviewed / Open Access
• [Journal Article] Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern (2015)
  • Author(s): T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai, and K. Shibusawa
  • Journal Title: ECS Transactions Volume: 66 Pages: 285-292
  • DOI: 10.1149/06605.0285ecst
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System (2015)
  • Author(s): H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii, S. Yamashita, A. Teramoto, S. Sugawa, and T. Ohmi
  • Journal Title: ECS Transactions Volume: 66 Pages: 305-314
  • DOI: 10.1149/06604.0305ecst
  • Peer Reviewed
• [Journal Article] Measurement and Analysis of Seismic Response in Semiconductor Manufacturing Equipment (2015)
  • Author(s): Kaori Komoda, Masashi Sakuma, Masakazu Yata, Yoshio Yamazaki, Fuminobu Imaizumi, Rihito Kuroda and Shigetoshi Sugawa
  • Journal Title: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Volume: 28 Pages: 289-296
  • DOI: 10.1109/TSM.2015.2427807
  • Peer Reviewed
• [Journal Article] Introduction of Atomically Flattening of Si Surface to Large-Scale Integration Process Employing Shallow Trench Isolation (2015)
  • Author(s): Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
  • Journal Title: ECS Journal of Solid State Science and Technology Volume: 5 Pages: P67-P72
  • DOI: 10.1149/2.0221602jss
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Random Telegraph Noise Measurement and Analysis based on Arrayed Test Circuit toward High S/N CMOS Image Sensors (2016)
  • Author(s): Rihito Kuroda, Akinobu Teramoto and Shigetoshi Sugawa
  • Organizer: 29th IEEE International Conference on Microelectronic Test Structures
  • Place of Presentation: メルパルク横浜（神奈川県・横浜市）
  • Year and Date: 2016-03-28 – 2016-03-31
  • Int'l Joint Research / Invited
• [Presentation] Wide dynamic range LOFIC CMOS image sensors: principle, achievements and extendibility (2016)
  • Author(s): Rihito Kuroda and Shigetoshi Sugawa
  • Organizer: International Forum on Detectors for Photon Science
  • Place of Presentation: 富士ビューホテル（山梨県・富士河口湖町）
  • Year and Date: 2016-02-29 – 2016-03-02
  • Int'l Joint Research / Invited
• [Presentation] CMOSイメージセンサの高速化・高感度化・広光波長帯域化技術 (2016)
  • Author(s): 黒田理人, 須川成利
  • Organizer: 第191回研究集会 シリコンテクノロジー分科会ナノ・接合技術研究会「接合技術の新展開(応用物理学会シリコンテクノロジー分科会)
  • Place of Presentation: 宝塚大学梅田キャンパス（大阪府・大阪市）
  • Year and Date: 2016-02-27 – 2016-02-27
  • Invited
• [Presentation] Advanced CMOS Image Sensor Development (2015)
  • Author(s): Rihito Kuroda
  • Organizer: Tohoku Univ. - imec Seminar 2015 Sendai Symposium on Analytical Science 2015 Joint Seminar on "Unobtrusive Sensing & Daily Health Screening"
  • Place of Presentation: 東北大学青葉山キャンパス（宮城県・仙台市）
  • Year and Date: 2015-11-13 – 2015-11-13
  • Int'l Joint Research
• [Presentation] An Ultraviolet Radiation Sensor Using Differential Spectral Response of Silicon Photodiodes (2015)
  • Author(s): Yhang Ricardo Sipauba Carvalho da Silva, Yasumasa Koda, Satoshi Nasuno, Rihito Kuroda, Shigetoshi Sugawa
  • Organizer: IEEE Sensors 2015
  • Place of Presentation: Busan, South Korea
  • Year and Date: 2015-11-01 – 2015-11-04
  • Int'l Joint Research
• [Presentation] Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface (2015)
  • Author(s): Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa
  • Organizer: 電子情報通信学会 シリコン材料デバイス研究会
  • Place of Presentation: 東北大学青葉山キャンパス（宮城県・仙台市）
  • Year and Date: 2015-10-29 – 2015-10-30
• [Presentation] Analysis and reduction of leakage current of 2kV monolithic isolator with wide trench spiral isolation structure (2015)
  • Author(s): Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
  • Organizer: 2015 International Conference on Solid State Devices and Materials
  • Place of Presentation: 札幌コンベンション センター（北海道・札幌市）
  • Year and Date: 2015-09-27 – 2015-09-30
  • Int'l Joint Research
• [Presentation] 電荷電圧変換ゲイン240uV/e-、飽和電子数200ke-、感度波長帯域190-1000nmを有するCMOSイメージセンサ (2015)
  • Author(s): 那須野悟史, 若嶋駿一, 楠原史章, 黒田理人, 須川成利
  • Organizer: 映像情報メディア学会技術報告 情報センシング研究会
  • Place of Presentation: 機会振興会館（東京都・港区）
  • Year and Date: 2015-09-18 – 2015-09-18
• [Presentation] フローティングディフュージョン容量成分の解析・低減技術と高感度・高飽和CMOSイメージセンサへの適用 (2015)
  • Author(s): 楠原史章, 若嶋駿一, 那須野悟史, 黒田理人, 須川成利
  • Organizer: 映像情報メディア学会技術報告 情報センシング研究会
  • Place of Presentation: 機会振興会館（東京都・港区）
  • Year and Date: 2015-09-18 – 2015-09-18
• [Presentation] A Linear Response Single Exposure CMOS Image Sensor with 0.5e- Readout Noise and 76ke- Full Well Capacity (2015)
  • Author(s): Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda and Shigetoshi Sugawa
  • Organizer: 2015 SYMPOSIUM ON VLSI CIRCUITS
  • Place of Presentation: リーガロイヤルホテル京都（京都府・京都市）
  • Year and Date: 2015-06-15 – 2015-06-19
  • Int'l Joint Research
• [Presentation] A 80% QE High Readout Speed 1024 Pixel Linear Photodiode Array for UV-VIS-NIR Spectroscopy (2015)
  • Author(s): Rihito Kuroda, Takahiro Akutsu, Yasumasa Koda, Kenji Takubo, Hideki Tominaga, Ryuuta Hirose, Tomohiro Karasawa and Shigetoshi Sugawa
  • Organizer: 2015 INTERNATIONAL IMAGE SENSOR WORKSHOP
  • Place of Presentation: Vaals, Netherlands
  • Year and Date: 2015-06-08 – 2015-06-11
  • Int'l Joint Research
• [Presentation] Analysis and Reduction of Floating Diffusion Capacitance Components of CMOS Image Sensor for Photon-Countable Sensitivity (2015)
  • Author(s): Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda and Shigetoshi Sugawa
  • Organizer: 2015 INTERNATIONAL IMAGE SENSOR WORKSHOP
  • Place of Presentation: Vaals, Netherlands
  • Year and Date: 2015-06-08 – 2015-06-11
  • Int'l Joint Research
• [Presentation] A 20Mfps Global Shutter CMOS Image Sensor with Improved Sensitivity and Power Consumption (2015)
  • Author(s): Shigetoshi Sugawa, Rihito Kuroda, Tohru Takeda, Fan Shao, Ken Miyauchi and Yasuhisa Tochigi
  • Organizer: 2015 INTERNATIONAL IMAGE SENSOR WORKSHOP
  • Place of Presentation: Vaals, Netherlands
  • Year and Date: 2015-06-08 – 2015-06-11
  • Int'l Joint Research
• [Presentation] A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response (2015)
  • Author(s): Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa
  • Organizer: 2015 INTERNATIONAL IMAGE SENSOR WORKSHOP
  • Place of Presentation: Vaals, Netherlands
  • Year and Date: 2015-06-08 – 2015-06-11
  • Int'l Joint Research
• [Presentation] Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern (2015)
  • Author(s): Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Naoya Akagawa, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai and Katsuhiko Shibusawa
  • Organizer: 227th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago, USA
  • Year and Date: 2015-05-24 – 2015-05-28
  • Int'l Joint Research
• [Presentation] Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System (2015)
  • Author(s): Hisaya Sugita, Yasukasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii, Satoru Yamashita, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: 227th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago, USA
  • Year and Date: 2015-05-24 – 2015-05-28
  • Int'l Joint Research
• [Presentation] ゲート絶縁膜/Si界面の原子オーダー平坦化によるランダムテレグラフノイズ低減効果 (2015)
  • Author(s): 黒田理人, 後藤哲也, 赤川直也, 木本大幾, 寺本章伸, 須川 成利
  • Organizer: 映像情報メディア学会技術報告 情報センシング研究会
  • Place of Presentation: 東京理科大学森戸記念館（東京都・新宿区）
  • Year and Date: 2015-05-08 – 2015-05-08
• [Presentation] UV/VIS/NIR imaging technologies: challenges and opportunities (2015)
  • Author(s): Rihito Kuroda, Shigetoshi Sugawa
  • Organizer: 2015 SPIE Sensing Technology + Applications
  • Place of Presentation: Baltimore, USA
  • Year and Date: 2015-04-20 – 2015-04-24
  • Int'l Joint Research / Invited