Theoretical Verification of Novel Graphene Terahertz Plasmonic Devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 26820122
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Tohoku University
• Principal Investigator: Satou Akira 東北大学, 電気通信研究所, 助教 (70510410)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: グラフェン / テラヘルツ / プラズモン

Outline of Final Research Achievements

In this study, for the realization of room-temperature operating terahertz plasmonic devices utilizing graphene plasmons, we theoretically verified device operation principles of plasmonic devices such as plasmon instabilities in asymmetric dual-grating-gate graphene transistors, interband population inversion in monolayer graphene, and resonant tunneling in double graphene layer. Especially, in the asymmetric dual-grating-gate graphene transistors, we demonstrated that a giant plasmon instability can take place due to the simultaneous occurrence of the so-called Dyakonov-Shur instability and Ryzhii-Satou-Shur instability.

Free Research Field

工学