Integration of Si-based MEMS and GaN-based light emitting devices on Si(111) by low-temperature growth technique

2015 Fiscal Year Final Research Report

• Project/Area Number: 26870108
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials; Device related chemistry
• Research Institution: The University of Tokyo
• Principal Investigator: Jitsuo Ohta 東京大学, 生産技術研究所, 助教 (60392924)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: GaN / MEMS / Si

Outline of Final Research Achievements

We have investigated the feasibility of integrating GaN-based light emitting devices and Si-based MEMS on Si(111) substrates. The use of AlN buffer layers led to suppression of GaN/Si interfacial reactions and allowed us to control the polarity of GaN films in the low-temperature pulsed sputtering deposition (PSD) process. It was also found that GaN epitaxial growth is possible on the patterned Si substrates. We fabricated GaN-based LEDs and confirmed their successful operation. These results indicate that the PSD low-temperature technique is quite promising as a future fabrication technique for the MEMS integrated with GaN-based optical devices.

Free Research Field

半導体結晶成長