Novel functionality in stoichiometrically controlled Fe3O4 heterointerface

2015 Fiscal Year Final Research Report

• Project/Area Number: 26870188
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Device related chemistry; Thin film/Surface and interfacial physical properties
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Kosuke Matsuzaki 東京工業大学, 元素戦略研究センター, 特任助教 (40571500)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: マグネタイト / 価数制御 / 構造欠陥 / エピタキシャル薄膜

Outline of Final Research Achievements

Atomic structural analysis and electronic structure of refined structural defects are studied in high-temperature annealed Fe3O4 thin films. The deviation from film stoichiometry, Fe and FeOx impurities and structural defects grown under non-equilibrium process were extremely reduced by high-temperature annealing in CO/CO2 atmosphere at 1000-1100oC. Existence of stable twin defect were found in the films although the nature of the superexchange interactions across the boundary is not changed in thin film form.

Free Research Field

無機半導体材料