2015 Fiscal Year Final Research Report
Novel functionality in stoichiometrically controlled Fe3O4 heterointerface
Project/Area Number |
26870188
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Device related chemistry
Thin film/Surface and interfacial physical properties
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
Kosuke Matsuzaki 東京工業大学, 元素戦略研究センター, 特任助教 (40571500)
|
Project Period (FY) |
2014-04-01 – 2016-03-31
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Keywords | マグネタイト / 価数制御 / 構造欠陥 / エピタキシャル薄膜 |
Outline of Final Research Achievements |
Atomic structural analysis and electronic structure of refined structural defects are studied in high-temperature annealed Fe3O4 thin films. The deviation from film stoichiometry, Fe and FeOx impurities and structural defects grown under non-equilibrium process were extremely reduced by high-temperature annealing in CO/CO2 atmosphere at 1000-1100oC. Existence of stable twin defect were found in the films although the nature of the superexchange interactions across the boundary is not changed in thin film form.
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Free Research Field |
無機半導体材料
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