Ultra-low power magnetization switching technology for magnetic tunnel junctions using inverse magnetostrictive effect

2015 Fiscal Year Final Research Report

• Project/Area Number: 26870192
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Nanostructural physics; Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Takamura Yota 東京工業大学, 大学院理工学研究科, 助教 (20708482)
• Research Collaborator: Nakagawa Shigeki 東京工業大学, 大学院理工学研究科, 教授 (60180246) ; Sugahara Satoshi 東京工業大学, 像情報工学研究所, 准教授 (40282842) ; Funakubo Hiroshi 東京工業大学, 大学院理工学研究科, 教授 (90219080) ; Kurosawa Minoru. K. 東京工業大学, 大学院総合理工学研究科, 准教授 (70170090) ; Yamamoto Shu'uichiro 東京工業大学, 像情報工学研究所, 特任講師 (50313375) ; Shuto Yusuke 東京工業大学, 像情報工学研究所, 特任助教 (80523670)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 逆磁歪効果 / 磁気抵抗変化素子 / スピントランスファートルク / ＭＲＡＭ

Outline of Final Research Achievements

Inverse-magnetostrictive magnetic tunnel junctions (IMS-MTJs) that consist of a MTJ with a large magnetostrictive ferromagnetic free layer and piezo-electric materials surrounding the MTJs were proposed. The critical current density JC for the magnetization switching of the IMS-MTJs were analyzed by simulation using the LLG equation. JC for the IMS-MTJs can be reduced by 1/10 compared to that for the conventional MTJs, which corresponds to the reduction by 1/400 in the consumption energy. Moreover, SmFe2 films formed by sputtering system were investigated.

Free Research Field

スピントロニクス