Development of stable radical-substituted electron-transporting amorphous molecular materials and its thin-film fabrications

2015 Fiscal Year Final Research Report

• Project/Area Number: 26870424
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Organic and hybrid materials; Functional solid state chemistry
• Research Institution: Nagoya University
• Principal Investigator: Tanaka Hiroyuki 名古屋大学, 理学(系)研究科(研究院), 特任助教 (40547832)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 電子スピン / アモルファス分子材料 / 電子輸送性材料 / 薄膜作製

Outline of Final Research Achievements

In order to control the state of electron spins in the electron-transporting amorphous thin film, novel stable neutral radical-substituted electron-transporting molecular materials were developed, in which tert-butyl nitroxide was introduced into 2,4,6-tri-phenyl-1,3,5-triazine of the electron-accepting moiety with m-phenylene-type linkage. By means of in-situ measurements of cyclic voltammetry and continuous wave-electron spin resonance spectrum at a low temperature, ferromagnetic exchange interaction (J > 0) between the anion radical on the triazine-acceptor moiety and the nitroxide radical was detected in a solution state. For application to thin-film devices, fabrication of amorphous thin films from the solution was performed by spin-coating method. The amorphous state of the obtained thin films was revealed by XRD measurements and AFM observations.

Free Research Field

機能材料化学