Dielectric Breakdown of Hexagonal Boron Nitride Film for Gate Insulator

2015 Fiscal Year Final Research Report

• Project/Area Number: 26886003
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Nanostructural physics
• Research Institution: The University of Tokyo
• Principal Investigator: Hattori Yoshiaki 東京大学, 工学(系)研究科(研究院), 研究員 (90736654)
• Project Period (FY): 2014-08-29 – 2016-03-31
• Keywords: h-BN / 絶縁破壊

Outline of Final Research Achievements

Hexagonal boron nitride (h-BN) is considered as ideal substrate for 2D material devises. However, the reliability of insulating properties of h-BN itself has not been clarified yet. The anisotropic dielectric breakdown of h-BN has been studied. We have found that the dielectric breakdown in c axis direction using a conductive atomic force microscope proceeded in the layer-by-layer manner. The obtained dielectric field strength was ~12 MV/cm, which is comparable to the conventional SiO2. On the other hand, metal electrodes were fabricated on the h-BN surface to measure the dielectric field strength in a direction perpendicular to c axis. The dielectric field strength was estimated to be 3 MV/cm, which is the smaller than that in c axis direction.

Free Research Field

ナノ構造物理