Single-electron devices based on codoped silicon nanocrystals

2015 Fiscal Year Final Research Report

• Project/Area Number: 26886008
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Nanostructural physics
• Research Institution: Kobe University
• Principal Investigator: Kano Shinya 神戸大学, 工学(系)研究科(研究院), 助教 (20734198)
• Project Period (FY): 2014-08-29 – 2016-03-31
• Keywords: 単電子トランジスタ / シリコンナノ結晶 / ボトムアップ / ナノギャップ / クーロンブロッケード

Outline of Final Research Achievements

The purpose of this research is to fabricate single-electron devices by bottom-up processes using all-inorganic co-doped silicon nanocrystals. Fabricated single-electron transistor consists of co-doped silicon nanocrystals (diameter: 7 nm), Au nanogap electrodes, and self-assembled monolayers. The single-electron transistor shows Coulomb diamonds in a stability diagram at a temperature of 9 K. This result indicates that multiple co-doped silicon nanocrystals are involved in a current transport of the device.

Free Research Field

ナノデバイス