Characterization of in-plane photoconductivity of InAs QDs layers and its application to photoconductive antenna

2015 Fiscal Year Final Research Report

• Project/Area Number: 26889043
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokushima
• Principal Investigator: Kumagai Naoto 徳島大学, ソシオテクノサイエンス研究部, 特任講師 (40732152)
• Research Collaborator: ISU Toshiro 徳島大学, 大学院ソシオテクノサイエンス研究部, 特任教授 (00379546) ; KITADA Takahiro 徳島大学, 大学院ソシオテクノサイエンス研究部, 特任准教授 (90283738) ; LU Xiangmeng 徳島大学, 大学院ソシオテクノサイエンス研究部, 特任助教 (80708800) ; MURAKUMO Keisuke 徳島大学, 大学院先端技術科学教育部, 修士課程
• Project Period (FY): 2014-08-29 – 2016-03-31
• Keywords: 量子ドット / 光伝導アンテナ / テラヘルツ

Outline of Final Research Achievements

In-plane photoconductivity of InAs quantum dots layers with ultrafast carrier relaxation (~ps order) has been characterized in order to argue the application of the InAs QDs to THz detection photoconductive antenna (PCA). Compared to the dark current, the obvious photocurrent has been observed. We have fabricated the PCA structure using the InAs QDs, and measured the photocurrent under excitation by 1.5-micron fs pulse laser which is used for an actual PCA operation. The Peak power density dependence of the photocurrent has been characterized by the pulse and CW excitations. As a result, the linear increasing of photocurrent has been shown clearly in the range of 6 orders of magunitude. These results indicate that the InAs QDs is the promising material for the application to PCA.

Free Research Field

半導体結晶工学