Development of c-Si/a-Si:H hybrid multi-layer optical transmitter toward 3D optical integrated circuits

2015 Fiscal Year Final Research Report

• Project/Area Number: 26889073
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Atsumi Yuki 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 研究員 (30738068)
• Project Period (FY): 2014-08-29 – 2016-03-31
• Keywords: シリコンフォトニクス / 偏波ビームスプリッタ / 多層光配線

Outline of Final Research Achievements

Silicon photonics has the potential to provide high-density signal transmission for interconnection in a datacenter. Recently, multilayered three-dimensional Si photonics integrated circuits (Si-PICs) have been researched to enhance circuit integration capacity and for partial waveguide bridges to reduce the loss of the numerous waveguide crossings. In this research, I proposed a compact Si interlayer polarization beam splitter (PBS) and a Si interlayer optical switch that are based on a crystalline Si (c-Si) and hydrogenated amorphous Si (a-Si:H) vertical asymmetrical directional coupler.The device with a 260-nm × 220-nm and a 340-nm × 200-nm waveguides operates in a broadband, with small insertion loss and crosstalk. The device is also robust in terms of alignment error between the vertical waveguides. Totally, the proposed device seems to be feasible.

Free Research Field

光半導体デバイス