1986 Fiscal Year Final Research Report Summary
Gaseous Electronic and Device Technological Studies on the Plasma Processing of Various Materials Utilizing Non-equilibrium Plasms.
| Project/Area Number |
59350017
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| Research Category |
Grant-in-Aid for Co-operative Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Gunma University |
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Principal Investigator |
SUGAWARA Minoru Gunma University, Faculty of Engineering, Professor, 工学部, 教授 (50008504)
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| Co-Investigator(Kenkyū-buntansha) |
内田 喜之 株式会社富士電機総合研究所, 電子デバイス研究所, 副所長
ITATANI Ryohei Kyoto University, Faculty of Engineering, Professor, 工学部, 教授 (90025833)
DOTE Toshihiko Saitama University, Faculty of Engineering, Professor, 工学部, 教授 (20087422)
MASE Hiroshi Ibaraki University, Faculty of Engineering, Professor, 工学部, 教授 (30007611)
SATOH Noriyoshi Tohoku University, Faculty of Engineering, Professor, 工学部, 教授 (40005252)
UCHITA Yoshiyuki Fuji Electric Corporate Research of Development Ltd, Vice-Director
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| Project Period (FY) |
1984 – 1986
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| Keywords | Plasma / Plasma Processing / Plasma Chemistry / Elementary Processes in Plasmas / Plasma Polymerization / r.f.Discharge / Plasma Diagnostics / 非平衡プラズマ |
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| Research Abstract |
The grant-in aid for co-operative research lasting three years (1984 - 1986) has been aimed to pursue joint efforts among plasma physicists, plasma chemists and device engineers and to study on gaseous electronic aspects and chemical processes of the plasma processing. In 1984, the first effort was devoted to devide the member of the co-operative research in 3 main research projects. In the following years, each of the member had extended their own subjects. Main results obtained by the member for the period have been summarized headed by the each project of the three groups as follows.
(1) Atomic and molecular elementary-processes in non-equilibrium plasmas ---- This project has been attacked by joint effort among the circumferencial research scientists (atomic physicists and chemical physicists). Physical and chemical aspects of the processes of thin film formation such as amorphous silicon have been studied by means of the computer simulation employing data of various rate coefficients of reactions.
(2) On plasmas utilizing for the plasma processing ---- Construction of r.f. discharge between two parallel plates has been studied experimentally in connection with sustaining mechanism of r.f. discharge. A hollow cathode discharge with confining axial magnetic field has produced a high density plasma.
(3) Diagnostics of processing plasmas ---- In order to eliminate the effect of deposition of Si on the Langmuir probe surface, a heated probe was used successfully in silane plasmas. A method to smoothen the V-I characteristics of Langmuir probe was proposed and it gave accurate energy distribution of electrons. PIG discharge was used to process the waste gas in the stage of exhausting the working gas (silane).
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