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1986 Fiscal Year Final Research Report Summary

Gaseous Electronic and Device Technological Studies on the Plasma Processing of Various Materials Utilizing Non-equilibrium Plasms.

Research Project

Project/Area Number 59350017
Research Category

Grant-in-Aid for Co-operative Research (A)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionGunma University

Principal Investigator

SUGAWARA Minoru  Gunma University, Faculty of Engineering, Professor, 工学部, 教授 (50008504)

Co-Investigator(Kenkyū-buntansha) 内田 喜之  株式会社富士電機総合研究所, 電子デバイス研究所, 副所長
ITATANI Ryohei  Kyoto University, Faculty of Engineering, Professor, 工学部, 教授 (90025833)
DOTE Toshihiko  Saitama University, Faculty of Engineering, Professor, 工学部, 教授 (20087422)
MASE Hiroshi  Ibaraki University, Faculty of Engineering, Professor, 工学部, 教授 (30007611)
SATOH Noriyoshi  Tohoku University, Faculty of Engineering, Professor, 工学部, 教授 (40005252)
UCHITA Yoshiyuki  Fuji Electric Corporate Research of Development Ltd, Vice-Director
Project Period (FY) 1984 – 1986
KeywordsPlasma / Plasma Processing / Plasma Chemistry / Elementary Processes in Plasmas / Plasma Polymerization / r.f.Discharge / Plasma Diagnostics / 非平衡プラズマ
Research Abstract

The grant-in aid for co-operative research lasting three years (1984 - 1986) has been aimed to pursue joint efforts among plasma physicists, plasma chemists and device engineers and to study on gaseous electronic aspects and chemical processes of the plasma processing. In 1984, the first effort was devoted to devide the member of the co-operative research in 3 main research projects. In the following years, each of the member had extended their own subjects. Main results obtained by the member for the period have been summarized headed by the each project of the three groups as follows.
(1) Atomic and molecular elementary-processes in non-equilibrium plasmas ---- This project has been attacked by joint effort among the circumferencial research scientists (atomic physicists and chemical physicists). Physical and chemical aspects of the processes of thin film formation such as amorphous silicon have been studied by means of the computer simulation employing data of various rate coefficients of reactions.
(2) On plasmas utilizing for the plasma processing ---- Construction of r.f. discharge between two parallel plates has been studied experimentally in connection with sustaining mechanism of r.f. discharge. A hollow cathode discharge with confining axial magnetic field has produced a high density plasma.
(3) Diagnostics of processing plasmas ---- In order to eliminate the effect of deposition of Si on the Langmuir probe surface, a heated probe was used successfully in silane plasmas. A method to smoothen the V-I characteristics of Langmuir probe was proposed and it gave accurate energy distribution of electrons. PIG discharge was used to process the waste gas in the stage of exhausting the working gas (silane).

  • Research Products

    (32 results)

All Other

All Publications (32 results)

  • [Publications] I.Ishikawa: J.Phys.D:Appl.Phys.17. 85-97 (1984)

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  • [Publications] 市川幸美: 電気学会技術報告 EP-84-43. 19-28 (1984)

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  • [Publications] T.Dote: J.Phys.Soc.Jpn.54. 4161-4171 (1985)

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  • [Publications] K.Itoh: J.Phys.Soc.Jpn.54. 3679-3682 (1985)

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  • [Publications] K.Montasser: J.Appl.Phys.58. 3185-3189 (1985)

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  • [Publications] K.Ninomiya: J.Appl.Phys.58. 1177-1182 (1985)

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  • [Publications] M.Sato: J.Plasma Physics. 34. 417-425 (1985)

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  • [Publications] M.Sugawara: J.Phys.D:Appl.Phys.19. 1213-1222 (1986)

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  • [Publications] T.Shibutami: J.Less-Common Met.120. 93-99 (1986)

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  • [Publications] H.Mase: 1986 DRY PROCESS SYMPOSIUM. 18-23 (1986)

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  • [Publications] S.Miyazaki: Extended Abstracts of the 18th(1986 International)Conference on Solid State Devices and Materials,Tokyo,1986. 675-678 (1986)

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  • [Publications] 塚田勉: Proc.10th Symp.on ISIAT '86 Tokyo. 665-674 (1986)

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  • [Publications] S.Yamaguti: Japan.J.Appl.Phys.26. ( ) (1987)

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  • [Publications] N.Sato: Phys.Rev.Lett.57. 1227-1230 (1986)

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  • [Publications] A.Tsushima: Phys.Rev.Lett.56. 1815-1818 (1986)

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  • [Publications] K.Tachibana: Phys.Rev.,A. 34. 1007-1015 (1986)

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  • [Publications] K.Tachibana: J.Phys.D:Appl.Phys.20. 28-35 (1987)

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  • [Publications] I. Ishikawa: "Ionisation Waves in Low Pressure SF. Gas" J. Phys. D:Appl. Phys.17. 85-97 (1984)

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  • [Publications] T. Dote: "Swarm Analysis by Using Transport Equation. <IX> . Transition from Free to Ambipolar Diffusion in the Cylindrical Positive Column of a Glow Discharge" J. Phys. Soc. Jpn.54. 4161-4171 (1985)

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  • [Publications] K. Itoh: "Localization in Low Temperarure Conduction of Si Surface Layera Implanted with Phosphorus" J. Phys. Soc. Jpn.54. 3679-3682 (1985)

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  • [Publications] K. Montasser: "Charcterization of Hard Transparent B-C-N-H Thin Films Formed by Plasma Chemical-Vapor Deposition at Room Temperature" J. Appl. Phys.58. 3185-3189 (1985)

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  • [Publications] K. Ninomiya: "Reaction of Atomic Fluorine with Silicon" J. Appl. Phys.58. 1177-1182 (1985)

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  • [Publications] M. Sato: "Dispersion Relation for Bernstein Waves Using a New Transformation for the Midified Bessel Function" J. Plasma Physics. 34. 417-425 (1985)

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  • [Publications] M. Sugawara: "Decay Processes of Atomic Ions in Low-Pressure Argon Afterglows" J. Phys. D:Appl. Phys.19. 1213-1222 (1986)

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  • [Publications] T. Shibutami: "Nitriding of Titanium in a Microwave Discharge <II> . Kinetic Study" J. Less-Common Met.120. 93-99 (1986)

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  • [Publications] H. Mase: "Energy Distribution of Ions Bombarding Target Immersed in Plasma" 1986 DRY PROCESS SYMPOSIUM. 18-23 (1986)

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  • [Publications] S. Miyazaki: "Resonant Tunneling Through Amorphous Silicon/Silicon Nitride Double Barrier Structures" Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986. 675-678 (1986)

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  • [Publications] S. Yamaguti: "Variation of Ion Current Flowing into Double Probes with Coating of Organic Thin Film in r. f. Discharge Plasma" Japan. J. Appl. Phys.26. (1987)

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  • [Publications] N. Sato: "Three-Dimensional Double Layers Inducing Ion-Cyclotron Oscillations in a Collisionless Plasma" Phys. Rev. Lett.57. 1227-1230 (1986)

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  • [Publications] A. Tsushima: "Control of Radial Potential Profile and Nonambipolar Ion Transport in an Electron Cyclotron Resonance Mirror Plasma" Phys. Rev. Lett.56. 1815-1818 (1986)

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  • [Publications] K. Tachibana: "Excitation of the 1 <s_5> , 1 <s_4> , 1 <s_3> , and 1 <s_2> Levels of Argon by Low-Energy Electrons" Phys. Rev., A. 34. 1007-1015 (1986)

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  • [Publications] K. Tachibana: "On the Decomposition of Si <H_4> by Hg ( <6^3> <P_1> ) Photosensitisation" J. Phys. D:Appl. Phys.20. 28-35 (1987)

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Published: 1988-11-09  

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