1985 Fiscal Year Final Research Report Summary
Realization of a low noise FET amplifier with wide bandwidth
Grant-in-Aid for Developmental Scientific Research
|Allocation Type||Single-year Grants |
|Research Institution||Kisarazu National College of Technology |
KODAIRA Shinji 木更津工業高専, その他, 助教授 (50042627)
|Project Period (FY)
1984 – 1985
|Keywords||Submillimeter / Low noise / Receiver / IF増幅器|
Advance of radio astronomy into the submillimeter region requires wider instantaneous observation bandwidth than for the millimeter region. For low noise receiver utilizing Josephson mixers, the instantaneous bandwidth is limited by the IF pre-amplifier.
In this research, we have tried to realize a 3 GHz FET amplifier with 2 GHz bandwidth.
The main results are :
(1) We assembled the noise measurment system which can be applied to measure lower noise characteristics than 70 K in 1 - 6 GHz.
(2) We designed an input network for the FET noise matching in 2 4 GHz. That is a three-sections transmission line which has an output impedance relatively independent of the frequency.
(3) At room temperature, the fabricated amplifier has a performance of 16 dB gain and 1.7 GHz bandwidth with the noise temperature less than 50 K. The FET is Mitubishi MGF1304.
(4) At the physical temperature of 65 K, the performance is 17 dB gain and 2 GHz bandwidth with the noise temperature less than 25 <+]-> 3 K. The noise band characteristics is almost flat. In this case, the FET is Mitubishi MGF1412.
(5) At the lower physical temperature less than 65 K, some further optimization are required to achieve an ultra-low-noise property.
Research Products (1 results)