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1986 Fiscal Year Final Research Report Summary

Development of Process Technology for Semiconductor Surface Cleaning by Using VUV Photochemical Reactions

Research Project

Project/Area Number 59850052
Research Category

Grant-in-Aid for Developmental Scientific Research

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

HIROSE Masataka  Department of Engineering, Hiroshima University, Professor, 工学部, 教授 (10034406)

Co-Investigator(Kenkyū-buntansha) HAYASHI Toshio  Department of Research Development, ULVAC Corporation, Chief Engineer, 技術開発部, 専門室長
小宮 宗治  日本真空技術K.K, 技術開発本部, 部長
YOKOYAMA Shin  Institute of Materials Science, University of Tsukuba, Assistant Professor, 物質工学系, 講師 (80144880)
KOMIYA Nobuharu  Department of Research Development, ULVAC Corporation, Head Manager
Project Period (FY) 1984 – 1986
KeywordsPhotochemical Etching / Vacuum Ultra-Violet / Photochemical Reaction
Research Abstract

Thermally grown silicon dioxide (Si <O_2> ), crystalline Gallium Arsenide (GaAs) and silicon (Si) surfaces was exposed to an etching gas under an ArF excimer laser irradiation. The reaction products on the surface and their chemical bonding features were studied by in-situ x-ray photoelectron spectroscopy at each step of the photochemical etching. Reaction kinetics of photochemical etching and resulting products on the solid surfaces have been revealed from the chemical shifts of adsorbates and substrate atoms. Etching products in Si <O_2> /(N <F_3> + <H_2> ) system are confirmed to be Si <F_4> , <N_2> O, and N <O_2> . For the etching of GaAs in HCl, Ga <Cl_3> and As <Cl_3> are found to be the most probable products in the gas phase. The photoluminescence measurements and the current-voltage characteristics of the Schottky barrier diodes indicate that the surface-defect density of the photochemically-etched sample is as low as that of the conventional wet etching. In the case of the etching of Si in N <F_3> , it was found that Si <F_X> (1 <-!<> X <-!<> 4) units and molecular fluorine exist in the reacting surface region. The surface Si-Si bonds attacked with fluorine are progressively fluorinated and the final surface products are mainly Si <F_4> and Si <F_3> . A possible mechanism of fluorine etching is discussed on the basis of a valence electron transfer (VET) model.

  • Research Products

    (19 results)

All Other

All Publications (19 results)

  • [Publications] S.Yokoyama: Extended Abstracts of the 5th lntern.Conf.on Solid State Devices and Materials. 451-454 (1984)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yokoyama: Appl.Phys.Lett.47. 389-391 (1985)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Hirose: J.Vac.Sci.Technol.B. 3. 1445-1449 (1985)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yokoyama: Proc.of 1985 lntern.Symposium on Gallium Arsenide and Related Compounds. 325-330 (1985)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yokoyama: Proc.of 1985 Dry Process Symposium. 39-43 (1985)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Hirose: Proc.of 1986 MRS Fall Meeting. (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ogura: Extended Abstrats of the 6th Intern.Conf.on Solid State Devices and Materials. 205-208 (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 広瀬全孝: レーザ学会研究会報告. 47-51 (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 広瀬全孝: "レーザ研究vo1.13「レーザ誘起エッチング及びCVD¨" The Laser Society of Japan, 8 (1985)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 広瀬全孝: "表面科学vo1.5「プラズマと光励起プロセス¨" 10 (1985)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 広瀬全孝: "半導体研究第26巻「レーザ誘起光化学プロセスの基礎過程¨" 工業調査会, 22 (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 広瀬全孝: "光・プラズマプロセシング第12章「光エッチング¨" 日刊工業, 19 (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Yokoyama, Y. Yamakage, and M. Hirose: "Laser-induced chemical dry etching of Si <O_2> " Extended Abstracts of the 5th Intern. Conf. on Solid State Devices and Materials. 451-454 (1984)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Yokoyama, Y. Yamakage, and M. Hirose: "Laser-induced photochemical etching of Si <O_2> studied by x-ray photoelectron spectroscopy" Appl. Phys. Lett.47. 389-391 (1985)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Hirose, S. Yokoyama, and Y. Yamakage: "Characterization of photochemical processing" J. Vac. Sci. Technol. B. 3. 1445-1449 (1985)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Yokoyama, T. Inoue, Y. Yamakage, and M. Hirose: "Laser-induced photochemical etching of GaAs and its characterization by x-ray photoelectron spectroscopy and luminescence" Proc. of 1985 Intern. Symposium on Gallium Arsenide and Related Compounds. 325-330 (1985)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Yokoyama, Y. Yamakage, and M. Hirose: "Anisotropic etching of Si <O_2> by excimer laser irradiation" Proc. of 1985 Dry Process Symposium. 39-43 (1985)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Hirose and T. Ogura: "Surface processes in laser-induced etching of silicon studied by x-ray photoelectron spectroscopy" Proc. of 1986 Material Research Society Fall Meeting. (1986)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Ogura, Y. Yamakage, T. Inoue, and M. Hirose: "Surface processes in fluorine-based photochemical etching of silicon" Extended Abstracts of the 6th Intern. Conf. on Solid State Devices and Materials. 205-208 (1986)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1988-11-09  

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