| Co-Investigator(Kenkyū-buntansha) |
KUNIO Yoshida Univ. of Tokyo, Facul. og Engineering, Prof., 工学部, 教授 (70010808)
KOREKAZU Ueyama Univ. of Tokyo, Facul. of Engineering, Assist. Prof., 工学部, 助教授 (10092149)
SHINTAROU Furusaki Univ. of tokyo, Facul. of Engineering, Prof., 工学部, 教授 (40011209)
HIROHSI komiyama Univ. of Tokyo, Facul. of Engineering, Assist. Prof., 工学部, 助教授 (80011188)
MOTOYUKI Suzuki Univ. of Tokyo, Inst. of Industrial Sci. Prof., 生産技術研究所, 教授 (10011040)
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| Research Abstract |
Seven individucal research groups joined this project to study cooperatively the mechanism of the growth of particles and films by the chemical vapor deposition method and the development of novel applications of the method. The followings list the activities of each group.
Inoue, H. studied surface reactions occurring in CVD and applied CVD of tetra-ethoxysilane to reduce the pore size of porous silica membrane. Suzuki,M. studied the gas-phase mechanisms occurring in MOCVD to prepare GaAs thin films. Komiyama, H. studied the gas-phase mechanims to produce Tio _2 particles by CVD using titanium-tetra-isopropoxide for pyrolysis and hydrolysis. He also tried to develop a new CVD approach which is named 'Particle precipitation aided CVD' for the rapid growth of Films. Ueyama, K. and Furusaki, S. studied the two component CVD process to produce the amorphous mixed particles of SiO_2 and GeO_2. Suganuma, A. studied high temperature preparation of TiO_2 from TiCl_4 and O_2. Yoshida, K. developed a fluidized CVD process to apply coating of particles, specifically coating of power plant fuel particles with graphite. Furusawa, T. developed also fluidization process to produce poli-silicon particles from silane.
Key words: CVD, Particle, Film, Fluidization, GaAs, TiO_2,Si, AlN
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