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1988 Fiscal Year Final Research Report Summary

Study on Nanofabrication and One-Dimensional Quantum Effects

Research Project

Project/Area Number 61420019
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionOsaka University,

Principal Investigator

GAMO Kenji  Osaka University, Faculty of Engineering Science Professor, 基礎工学部, 教授 (70029445)

Co-Investigator(Kenkyū-buntansha) ISHIDA Shuuichi  Yamaguchi Junior College, Science University of Tokyo Professor, 山口短期大学, 教授 (70127182)
YUBA Yoshihiko  Osaka University, Faculty of Engineering Science Research Assistant, 基礎工学部, 助手 (30144447)
TAKAI Mikio  Osaka University, Faculty of Engineering Science Associate Professor, 基礎工学部, 助教授 (90142306)
Project Period (FY) 1986 – 1988
KeywordsNanofabrication / Mesoscopic Phenomena / Aharanov-Bohm Effect / Quantum Interference Effect / 量子干渉効果 / 電子波エレクトロニクス
Research Abstract

The present project is to establish the basis of nanofabrication technology and to investigate mesoscopic effects and their control by external fields in nanostructures, which are important for future quantum devices. The results are summarized as follows.
1) It was demonstrated that SiO_2 and Si_3N_4 are effectively patterned by ion beam assisted etching with high etching rate, more than 100 times faster than the physi-cal sputter etching. Reduction of process induced damage in GaAs was also demonstrated by using low energy focused ion beams. These results are important for maskless etching or deposition using focused ion beams.
2) We, first, observed universal conductance fluctuations in GaAs which comes from interference of electron waves in mesoscopic structures. In addition, we also found nonlocality and asymmetry of magnetoresistance. This was realized by using nanofabrication technology which we have established.
3) We, first, observed a clear Aharanov-Bohm effect in GaAs/GaAlAs heterostructure submicron ring devices. This indicates the possibility of controlling the inter-ference effects by an external fields, which is important for device applications.
4) We observed various ballistic transport effects in GaAs/GaAlAs heterostructure quantum wires. We, first, demonstrated that a large negative resistance appears at bents or interconnects of current path becouse electrans travel straightforward in ballistic region.
5) We observed one dimensional quantum size effect in narrow GaAs/GaAlAs wires.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] Y.Takagaki;K.Gamo;S.Namba;S.Ishida;S.Takaoka;K.Murase;K.Ishibashi;Y.Aoyagi: Solid State Communications. 68. 1051-1054 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Gamo;H.Miyake;Y.Yuba;S.Namba;H.Kasahara;S.Sawaragi;R.Aihara: J.Vac.Sci.Technol.B6. 2124-2127 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Miyake;Y.Yuba;K.Gamo;S.Namba;R.Mimura;R.Aihara: Jpn.J.Appl.Phys. 27. L2037-L2039 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ishibashi;Y.Takagaki;K.Gamo;S.Namba;S.Takaoka;K.Murase;S.Ishida;Y.Aoyagi: J.Vac.Sci.Technol.B6. 1852-1856 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Takagaki;K.Gamo;S.Namba;S.Takaoka;K.Murase;S.Ishida;K.Ishibashi;Y.Aoyagi: Solid State Communications. 69. 811-815 (1989)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Takagaki;K.Ishibashi;S.Ishida;S.Takaoka;K.Gamo;K.Murase;S.Namba: Japanese Journal of Applied Physics.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 蒲生健次: "VLSIプロセス第6章集束イオンビームプロセス" 丸善,

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Namba,K.Murase and K.Gamo: "Nanostructure Fabrication and Science" Springer Verlag,

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Takagaki;K.Gamo;S.Namba;S.Ishida;S.Takaoka;K.Murase;K.Ishibashi;Y.Aoyagi: "Nonlocal Quantum Transport in Narrow Multibranched Electron wave Guide of GaAs-AlGaAs" Solid State Communications. 68. 2124-2127 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Gamo;H.Miyake;Y.Yuba;S.Namba;H.Kasahara;S.Sawaragi;R.Aihara: "Defect Study in GaAs Bombarded by low-Energy Focuced Jon Beams" J.Vac.Sci.Technol. B6. 2124-2127 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Miyake;Y.Yuba;K.Gamo;S.Namba;R.Mimura;R.Aihara: "Distribution Protiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation" Jpn.J.Appl.Phys. 27. 2037-2039 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ishibashi;Y.Takagaki;K.Gamo;S.Namba;S.Takaoka;K.Murase;S.Ishida;Y.Aoyagi: "Fabrication and Transport Characteristics of Semiconductor Wire and Ring Structures" J.Vac.Sci.Technol. B6. 1852-1856 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Takagaki;K.Gamo;S.Namba;S.Takaoka;K.Murase;S.Ishida;K.Ishibashi;Y.Aoyagi: "Nonlocal Voltage Fluctuations in a Quasi Ballistic Electron Waveguide" Solid State Communications. 69. 811-815 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Namba;K.Murase;K.Gamo: Nanostructure Fabrication and Science. Springer Verlag,

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1990-03-20  

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