1987 Fiscal Year Final Research Report Summary
Growth History of III-V Compound Crystals by IR Light Scattering Tomograpyhy
| Project/Area Number |
61460238
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
結晶学
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| Research Institution | Gakushuin University |
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Principal Investigator |
OGAWA Tomoya Department of Physics, Gakushuin University, 理学部, 教授 (50080437)
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| Co-Investigator(Kenkyū-buntansha) |
KOJIMA Takahiro department of Commerce, Senshu University, 商学部, 教授 (50070272)
KAWAI Yoriyoshi Department of Physics, Gakushuin University, 理学部, 研究員 (30158860)
OOTSUKA Ken-ichi Departmen of Physics, Gakushuin University, 理学部, 助手 (30101588)
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| Project Period (FY) |
1986 – 1987
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| Keywords | Light scattering tomography / Infrared light scattering / III-V compounds / Lattice Defects / 光散乱トモグラフィー |
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| Research Abstract |
Defects in crystals are marks and signs which have been introduced during crystal growth and then indicate how the crystals have been grown. Of course, the defects should be extracted from the crystals but we can use the defects to analyze growth mechanism of crystals by detecting distribution, sort and size of the defects. Or we can say that the study of the growth history is only one way to get well qualified crystals.
Optical property of matters do not depend directly upon the atomic numbers of their composite elements but absorption coefficient of x-rays is directly proportional to the atomic number of composite elements. Therefore, infrared (IR) light scattering, which will be caused by density fluctuation of electron densities polarized by IR radiations, is much better than x-ray diffraction if the crystals to be studied are composed of heavy elements. The density fluctuation of electrons will be caused by lattice defects such as dislocations, inclusions and voids and thus we can detect the defects by IR light scattering.
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