1987 Fiscal Year Final Research Report Summary
Characterization of -SiC Surface and its MIS Structure Using Electron Spectroscopy and Electrical Measurement
| Project/Area Number |
61550019
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
MIZOKAWA Yusuke Univesity of Osaka Prefecture, Associate Professor, 総合科学部, 助教授 (90094515)
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| Co-Investigator(Kenkyū-buntansha) |
小茂田 治 大阪府立大学, 総合科学部, 教務技師
MIYASATO Tatsuro Kyushu Institute of Technology, Professor, 情報工学部, 教授 (90029900)
KOMODA Osamu University of Osaka Prefecture, Research Engineer
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| Project Period (FY) |
1986 – 1987
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| Keywords | Silicon-carbide / <beta>-SiC / Silicide / Carbide / Metallization / LEED・AES分析 |
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| Research Abstract |
SiC is a large band gap semiconductor which is an attractive material for high power, high temperature device and short wave length LED etc. Understanding the SiC surface and interface becomes very important to the development of MISFET's and metal-SiC contacts.
The carbon CKVV Auger spectra from -SiC, natural diamond, graphite and diamond-like-carbon film have been investigated closely using both XPS and AES. The CKVV spectra as a fingerprint of the carbon state have been established. Further, the sample damage due to the AES electron beam has also been evaluated. The chemically etched surface of <beta>-SiC was found to be nearly stoichiometric, with only a small amount of adsorbed oxygen, which appears to be localized on the Si-site. The sample surface was cleaned by heating to 1100゜C by a dc current passing through under UHV. A diffused (4Xl) LEED pattern from as-etched SiCtransformed to clear (2X2) after cleaning. In both the SiLVV and CKVV spectra there were well developed peaks at
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17 eV and 24 eV below the main Auger peaks. They were assigned as a surface and bulk plasmon loss peaks, tespectively. Since SiC is a compound material, once the sample was experienced in a bombardment or metalization it was difficult to reproduce a well defined clean surface by re-heating.
Evaporation of Ti on <beta>-SiC at room temperature resulted in a formation Ti-carbide and free-Si. The trend was accelerated at an elevated temperature. Auger line shape of both SiLVV and CKVV changed even for initial Fe coverage at room temperature, indicating substantial bond alteration in the SiC substrate. Only Fe-carbide appeared at the surface of a thick-Fe-film/<beta>-SiC after a 250゜C anneal. On the other hand, a large amount of free-Si as well as a lesser amount of Fe-carbide appeared during a 540゜C anneal. Both free-Si and Fe-carbide intensity rapidly decreased after a slight sputtering, suggesting that they segregated through a grain boundary diffusion. The depth progile showed the silicide:Fe-carbide:free-Fe ratio of about 1:2:5:17 in the bulk of film. At the interface, a pile-up of elemental Si was found. Metalization of <beta>-SiC using other metal and an evaluation of its electrical property are now in progress. Less
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