1987 Fiscal Year Final Research Report Summary
ELECTRONIC PHYSIC ON A METAL-SEMICONDUCTOR INTERFACE
| Project/Area Number |
61550231
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | FACULTY OF ENGINEERING, KYUSHU INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
TOYAMA NAOTAKE ASSOCIATE PROFESSOR, FACULTY OF ENGINEERING, KYUSHU INSTITUTE OF TECHNOLOGY, 工学部電子工学科, 助教授 (10039117)
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| Project Period (FY) |
1986 – 1987
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| Keywords | METAL-SEMICONDUCTOR CONTACT / SCHOTTKY DIODE / INTERFACE / シリサイド |
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| Research Abstract |
Metal-Si Schottky contacts have been made by using various metals in order to investigate the dependence of typical diode parameters, such as the barrier height and the effective Richardson constant, on a film thickness of the metal electrode. In any contact with a metal-electrode film below 400 <Ang> thickness, the Schottky barrier height evidently varies with the film thickness. The effective Richardson constant obtained by a photoelectrical measurement shows different values, depending upon the choice of metal, and also shows a metal-thickness dependence, contrary to the generally accepted theory for metal-semiconductor contacts. In particular, the effective Richardson constant in a sample made by rf sputtering shows a much larger film-thickness dependence than that in a sample by vacuum evaporation. Furthermore, for the purpose of investigating the cause of the change in the effective Richardson constant with the metal-film thickness, a 1000-<Ang>-thick Pt film has been deposited by rf sputtering onto Si substrates which have been heated to various temperatures between room temperature and 500゜C. The barrier height and the effective Richardson constant for these Pt-Si contacts have been investigated photoelectrically. As a result, it has been found that the dependences of the barrier height and the Richardson constant on the thickness of a sputtered Pt film quite agree with the dependences of those on the temperature of a Si substrate.
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