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1987 Fiscal Year Final Research Report Summary

The Trial Manufacture of a Ultra-low Energy Positron Diffraction Apparatus

Research Project

Project/Area Number 61840006
Research Category

Grant-in-Aid for Developmental Scientific Research

Allocation TypeSingle-year Grants
Research Field 固体物性
Research InstitutionUniversity of Tsukuba

Principal Investigator

SHOICHIRO TANIGAWA  Univ. Tsukuba, Associate Probessor, 物質工学系, 助教授 (90011080)

Co-Investigator(Kenkyū-buntansha) ISHII Akira  Japan Society for the promotion of science, Special Reseatcher, 特別研究員(62.2 (70183001)
Project Period (FY) 1986 – 1987
KeywordsSlow positrons / positron diffraction / ultra-low energy positron diffraction(ULEPD) / LEED / RHEED / 表面構造解析
Research Abstract

As surface analysis technique, LEED was frequently used at an early stage. At present, RHEED is efficiently used because og the difficulty in the theoretical treatment of LEED data. In the present ptoject, We aimed to develop a ultra-low energy positron diffraction apparatus, which seems to be easily treated by theoretical aspects and be more sensitive to surface strcutures than LEED. As compared with LEED, ULEPD is superior in the following points; low multiple scatteting, no exchange interaction, nearly zero inner potential and so on. In this project, we manufactured trially a ulta-low energy positron diffraction apparatus. At an initial stage, we calculated the trajectory of positrons for various conditions and designed electrostatic docussing lens system. This focussing lens system was composed of two-tube lenses with cylindtrical electrostatic rings, symmetric Einzel lenses and anti-symmetric Einzel lenses. For the extraction of positrons, we utilized the lens system developed by … More Soa. This Soa gun showed an excellent focussing property in a very wide range. Trajectory calculations were made by the method of transformation matrices which is widely used in the electron optics. We calculated trajectories from the first Soa gum to the entrance to CMA, from the exit fo CMA to the first remoderatoe crystal, from the secong Soa gun to the second remoderator crystal, the third Soa gun to the final zoom lens, and from the exist of zoom lens to teh specimen position, respectively. From this calculation, we determined the optimum values of applied voltages for 35 electrostatic rings. For this arrangement, the beam diameter of 1.7mm at lev, 0.5mm at 10eV and 0.17mm at 100V was obtained at the dispersed angle og 1.15 degree. as a preliminaly measurement of ultra-low positron diffraction, we measured the counting rate of gamma rays from annihilation of positrons in the Cu (100) surface by an assembly of BaF2 scintillator and a photomultiplier tube as a function of incident positron energy. The counting rate showed minima at energies correpsonding to Bragg conditions. This garanteed the efficient operation of this apparatus. Less

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] A.Uedono: Radioisotopes.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Uedono: Phys. Lett. A.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Tanigawa: 放射線化学.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J. L. Lee: Appl. Phys. Lett.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J. L. Lee: Appl. Phys. Lett.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Uedono: Appl. Phys. Lett.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 谷川庄一郎: "表面物性工学ハンドブック(「陽電子による表面測定手法」の項)" 丸善, 4 (1987)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 谷川庄一郎: "応用物理ハンドブック(「陽電子消滅法」の項)" 丸善, 3

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Uedono: "A Detection of Helium Implanted into Nickel by Slow Positrons" Phys. Less. A.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J. L. Lee: "Depth Profiles of Iom-implantation Induced Vacanct-type Defects in GaAs and Si Observed by Slow Positrons" Appl. Phys. Lett.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J. L. Lee: "Depth Profiles of Vacancy-type Defencts in Si_+ - implanted GaAs Resulting from Rapid Thermal Annealing" Appl. Phys. Lett.under submission

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Uedono: "The Depth Profile of Vacancy-type Defects in B_+-implanted Si with a SiO2 Overlayer by a Variable-energy Positron Beam" Appl. Phys. Lett.under submission

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Uedono: "Variable-energy positron-Abeam Studies of SiO_2/ Si Irradiated by Ionizing Radiations" Appl. Phys. Lett.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Tanigawa: Maruzen. Surgace Analyses by Positrons in Handbook for Surface Science and Technology, 4 (1987)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1989-03-30  

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