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1988 Fiscal Year Final Research Report Summary

Design and Prototype Construction of Infrared Resonance Scattering Tomography

Research Project

Project/Area Number 61850006
Research Category

Grant-in-Aid for Developmental Scientific Research

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionDepartment of Physics, Gakushuin University

Principal Investigator

OGAWA Tomoya  Department of Physics, Gakushuin University, 理学部, 教授 (50080437)

Co-Investigator(Kenkyū-buntansha) NANGO Nobuhito  Ratoc System Engineering, 代表取締役
KOJIMA Takahiro  Department of Physics, Gakushuin University, 商学部, 教授 (50070272)
KAWAI Yoriyoshi  Department of Physics, Gakushuin University, 理学部, 研究員 (30158860)
SAKAI Kazufumi  Department of Physics, Gakushuin University, 理学部, 助手 (40205703)
Project Period (FY) 1986 – 1988
KeywordsInfrared Light Scattering / Resonance Scattering / Compound Semiconductors / Lattice defects / Crystal Growth / 光散乱トモグラフィー
Research Abstract

Since scattering intensity of IR light is dependent upon electronic polarization or displacement of electrons cause by the incident light, the light scattering from semiconductors will be classified into the following three items:
1. the polarization induced by electrons traped in electronic centers and/OR defects in semiconductor crystals. Here, the electrons show restoring force against their displacement and then they have their own resonance frequencies which are determined by the mass and restoring force of the electrons.
2. the polarization due to electrons in tiny particles inside semiconductors, which will show a resonance similar to the plasma resonance inside metal particles.
3. Polarization due free carriers, which will mainly contribute to absorption because of no restoring force against displacement of electrons.
The resonance mentioned above the category 1 and 2 will be observed if we abjust temperature of the specimens to be examind or frequency of incident IR light. Unfortunately, we don't have any tuneable laser in the frequency range of 1 micron.
Here, the sample is installed in a cryostat which temperature is changed by a refrigerator from room temperature to 24K. The stability of the temperature is 0.1 K. Thus, we have clearly observed resonance type scattering from an In-doped GaAs crystal at 130 K by 1.15mu m radiation of a He-Ne Laser, which was confirmed experimentally.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] Tomoya Ogawa: J.Crystal Growth. 88. 332-340 ((1988))

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomoya Ogawa;Kazufumi Sakai;Yutaka Yamada: Japan.J.Appl.Phys.27. L1327-L1330 ((1988))

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masahito Watanabe;Tomoya Ogawa: Japan.J.Appl.Phys.27. 1066-1070 ((1988))

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takahiro Kojima;Toshiyuki Noguchi;Tomoya Ogawa:Jpan.J.Appl.Phys.27. 1331-1334 ((1988))

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomoya Ogawa: Japan.J.Appl.Phys.26. L1638-L1641 ((1987))

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomoya Ogawa: Japan.J.Applied Physics. 25. L316-L318 ((1986))

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomoya Ogawa;Takahiro Kojima: ""Defect Rrcognition and Image Processing"" ELSEVIER Amsterdam,Netherlands,320 ((1987))

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomoya Ogawa: ""Defect Recognition and Image Processing"" ELSEVIER,Amsterdam,The Netherlands,306 ((1985))

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomoya,Ogawa: "Dislocation lines in indum doped GaAs crystals observed by infrared light scattering tomography of about 1 micrometer wavelength radiation" J. Crystal Growth. 88. 332-340 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tomoya,Ogawa; Kazufumi,Sakai; Yutaka,Yamada: "A proposal for Measurememt of implanted ion dose in semiconductor wafers by IR light scattering technique" Japan. J. Appl. Phys.27. 1327-1330 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masahito,Watanabe; Tomoya,Ogawa: "Raman scattering and photoluminescence tomography" Japan. J. Appl. Phys.27. 1066-1070 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Takahiro,Kojima; Toshiyuki,Noguchi; Tomoya,Ogawa: "X-ray diffraction microscopy by an electronic streak camera system" Japan. J. Appl. Phys.27. 1331-1334 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tomoya,Ogawa: "Characterization of epitaxially grown semiconductive layers by scattering tomography and IR absorption microscopy" Japan. J. appl. Phys.26. 1638-1641 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tomoya,Ogawa; Takahiro,Kojima: "Defect Recognition and Image Processing". Amsterdam, Netherlands,320 (1987)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1990-12-19  

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