1988 Fiscal Year Final Research Report Summary
Investigation of Photo-degradation mechanism of semiconductor-organic material interface
| Project/Area Number |
61850146
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| Research Category |
Grant-in-Aid for Developmental Scientific Research
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| Allocation Type | Single-year Grants |
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| Research Field |
工業物理化学
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| Research Institution | The University of Tokyo |
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Principal Investigator |
FUJISHIMA Akira Department of Synthetic Chemistry, Faculty of Engineering, University of Tokyo :, 工学部, 教授 (30078307)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIDA Yutaka Nippon Paint Co. : Manager, 技術センター, 課長
KATO Tamihiko Nagoya Institute of Technology : Lecturer, 講師 (90024257)
ITOH Kiminori Department of Synthetic Chemistry, Faculty of Engineering, University of Tokyo :, 工学部, 講師 (40114376)
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| Project Period (FY) |
1986 – 1988
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| Keywords | Semicondctor / Photoexcitation / Photocatalysis / チョーキング / 光反応活性 |
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| Research Abstract |
Semiconductor materials are now very important in various fields. Some of their properties such as photosensitive properties have not been well understood.
We have investigated photodegradation of organic materials in which semiconductor materials such as small powders are included. Since we have enough experiences for electrochemical phenomena of photoexcited semiconductor-liquid interfaces, photoelectrochemical techniques have been employed. At first, photocatalytic activity of semiconductor surface was measured by using of semiconductor electrode insulated with oeganic layers. Photocurrent at the constant applied vias increased with irradiation time indicating that photoexcited holes formed in the valence band extracted electrons from the organic molecules. Therefore, the organic molecules were oxidized and degraded. Secondly we studied a new method named as photosinking for estimation of photocatalytic activity of semiconductor powders which were coated with some organic molecules with hydrophobic character. From the photosinking rate photocatalytic activity has been estimated.
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Research Products
(34 results)
