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1989 Fiscal Year Final Research Report Summary

Hetero MIS Structure Using Ultra High Mobility Semiconductor

Research Project

Project/Area Number 62460118
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

MATSUMURA M.  Tokyo Inst. of Tech., Eng., Professor, 工学部 (30110729)

Co-Investigator(Kenkyū-buntansha) SUGIURA O.  Tokyo Inst. of Tech., Eng., Associate Prof., 工学部, 助教授 (10187643)
ODA S.  Tokyo Inst. of Tech., Eng., Associate Prof., 工学部, 助教授 (50126314)
Project Period (FY) 1987 – 1989
KeywordsMIS Transistor / Hetero Junction / Indium Antimonide / Cadmium Telluride / Surface States / MOCVD / MBE / MIS Capacitor
Research Abstract

Aim of this work is to demonstrate an usefulness of Indium Antimonide (InSb) for semiconductor materials in the 21 century, when reduction of device size, the dominant motive force of the present improvement in integrated circuits, will loss its advantage due to various size effects.
We have pointed out the Cadmium Telluride (CdTe)/InSb hetero structure can be considered as MIS structure at 77K, since they have the same lattice constant and energy gap of CdTe is as wide as 1.6eV while that of InSb as 0.23eV at 77K. The band diagram of the CdTe/InSb hetero structure at 77K is very similar to that of the SiO_2/Si system at room temperature if we normalized them by thermal energy.
We have grown CdTe on InSb by vacuum MOCVD method. DET was cracked at 670゚C just at the inlet of the reactor, while DMCd gas was used as the Cd source. Single crystal CdTe was grown at substrate temperatures as low as 250゚C. This hetero structure has been confirmed, by C-V measurement, to operate as MIS structure at 77K.
MBE method has be used for growing better CdTe/InSb hetero structure. Single crystal CdTe films have been grown at substrate temperatures between 207 and 243゚C with smooth surface. This hetero structure showed good MIS characteristics. It was found that the best substrate temperature is about 240゚C.
InSb MIS transistors using MBE grown CdTe/InSb hetero structure have been fabricated, for the first time, and it was operated successfully. The field effect mobility was 1200cm^2/Vs. The performance will be improved drastically by adding an MBE grown InSb buffer layer between the substeate and CdTe.

  • Research Products

    (8 results)

All Other

All Publications (8 results)

  • [Publications] O.Sugiura,他: "“Hetero-epitaxial Growth of CdTe on InSb by Metalorganic Chemical Vapor Deposition"," Appl.Phus.Lett.,. 51. 1510-1511 (1987)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Shiina,他: "“Electrical Proper-ties of CdTe/InSb Hetero Metal-Insulator-Semiconductor" Appl.Phys.Lett.,. 52. 1306-1307 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda,他: "“Heteropitaxial Growth of HgTe of InSb at 200℃ by Metalorganic Chemical Vapor Deposition Using Ditertiarybutyltelluride"," J.Appl.Phys.,. 65. 1808-1809 (1989)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O.Sugiura,他: "“MBE grown CdTe/InSb Hetero MIS Transistors"" To be subomitted.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O.Sugiura, Y.Tanaka, K.Shiina, and M.Matsumura: "Heteroepitaxial Growth of CdTe on InSb by Metalorganic Chemical Vapor Deposition" Appl. Phys. Lett., Vol.51, No.19, p.1510 (1987).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shiina, Y.Tanaka, O.Sugiura and M.Matsumura: "Electrical Proper-ties of CdTe/InSb Hetero Metal-Insulator-Semiconductor Structure" Appl. Phys. Lett., Vol.52, No.16, p.1300 (1988).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Oda, Y.Tanaka, O.Sugiura and M.Matsumura: "Heteroepitaxial Growth of HgTe of InSb at 200゚C by Metalorganic Chemical Vapor Deposition Using Ditertiarybutyltelluride" J Appl. Phys., Vol.65, No.4, p.180 (1989).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O.Sugiura, A.Hayashi, K.Shiina, K.Haseyama, S.Sugahara and M.Matsumura: "MBE grown CdTe/InSb Hetero MIS Transistors"

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1993-03-26  

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