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1988 Fiscal Year Final Research Report Summary

The development of research system with trial manufacturing integrated semiconductor devices based on a technical college and local electronic engineers

Research Project

Project/Area Number 62880035
Research Category

Grant-in-Aid for Developmental Scientific Research

Allocation TypeSingle-year Grants
Research Field 科学教育(含教育工学)
Research InstitutionMiyagi National College of Technology (M.N.C.T.)

Principal Investigator

KARASAWA Shinji  Professor,Electrical Engineering Devision,M.N.C.T., 電気工学科, 教授 (10042243)

Co-Investigator(Kenkyū-buntansha) 東山 尚稔  日本電気民生LSI事業部, 技術課長
佐々木 〓彦  宮城高専, 電気工学科, 助教授 (50026308)
YAGI Masaaki  Professor,Electrical Engineering Devision,M.N.C.T., 電気工学科, 教授 (80005371)
KOEDA Shouzou  Professor,Electrical Engineering Devision,M.N.C.T., 電気工学科, 教授 (30042229)
SASAKI Akihiko  Associate Professor,Electrical Engineering Devision,M.N.C.T.
HIGASHIYAMA Naotoshi  Technical section head,Division of consumer LSI,Nippon Electric Company
Project Period (FY) 1987 – 1988
Keywordsengineering education / open class / local electronic engineer / researches with trial manufacturing / 試作研究システム / 半導体素子製造プロセス
Research Abstract

The purpose of this project is to construct a research system based on a technical college and local electronic engeneers.
In this project,the open class where local electionic engeneers as trainees manufactured semicon-ductor devices,was conducted twice at Miyagi National College of Technology. The first open class was held from July 27, 1987 to August 6, 1987 and participants are 6 lecturers,7 assistants and 6 trainees.
The second open class was held from July 26,1988 to August 4,1988 and participants are 8 lecturs,7 assistants and 6 trainees. After the trainning, the staffs of college cooperated by the local electronic engineers carried out the joint researches.
The subjects of researches are as follows :i.e
1) the wedge shaped sourse-drain MOS FET
2) the temperature dependence of pn junction as a temperature sensor of power device
The achievements of the open class are published as the research manual entitled "Fabrication of p-MOS IC" and "Fabrication of Semiconductor Sensor " and the results of research work are reported in the journal as is listed in a sepalate paragraph.
Through this project,spirits of enquiring were promoted in the college and in the local industry.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] 唐澤信司: 日本工業教育協会誌. 36. 44-45 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 唐澤信司: みやぎ産業科学. 2. 13-16 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 唐澤信司: 半導体、集積回路技術第34回シンポジウム講演論文集. 85-90 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 唐澤信司、桑島健次、駆動治夫: 昭和63年度電気関係学会東北支部連合大会講演論文集. 226 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 赤間朋子、桑島健次: 昭和63年度電子情報通信学会学生会研究発表会講演論文集. 19. 36 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 唐澤信司: 1989年度電子情報通信学会春季全国大会講演論文集. (C)240 (1989)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 唐澤信司: "pMOS ICの製作" 宮城工業高等専門学校電気工学科, 34 (1987)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 唐澤信司、三浦、鈴木、川波、野角: "半導体センサの製作" 宮城工業高等専門学校電気工学科, 56 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Karasawa: "Industrial Education in the days when Reseach Developments meet the need" Journal of Engineering Education in Japan. 36. 44-45 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Karasawa: "Development of a weight sensor consists of Wedge Shaped Source-Drain MOS FET" Industrial Science in Miyagi. 2. 13-16 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Karasawa: "The Wedge Shaped Source-Drain MOS FET" Proceedings of the 34 the Symposium on Semiconductors and Integrated Circuits Technology. 34. 85-90 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Karasawa,K.Kuwajima,H.Kudou: "A Fabrication of pn Junction Used for a Temperature Sensor of Power Device in Sillicon Chip" 1988 Tohoku-Section Joint Convension Record of Institutes of Electrical and Information Engineer JAPAN. 226 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Karasawa: "Effects on I-V Characteristics due to Localized High-Temperature in MOS FET" National Convention Record 1989 The Institate of Electronics,Information and Communication Engineers. 240 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Karasawa,et al.: 1) Fabrications of p-MOS IC, 2) Fabrications of Semiconductor-Sensor. Miyagi National College of Technology, 34 56 (1) 1987 , 2) 1988)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1990-12-19  

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