1991 Fiscal Year Final Research Report Summary
Carrier dynamics in amorphous semiconductor superstructures
| Project/Area Number |
63460056
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied materials
|
|---|
| Research Institution | Kyoto University |
|---|
Principal Investigator |
MATSUNAMI Hiroyuki Kyoto Univ., Dept. of Electrical Eng., Professor, 工学部, 教授 (50026035)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
YOSHIMOTO Masahiro Kyoto Univ., Dept. of Electrical Eng., Research Associate, 工学部, 助手 (20210776)
FUYUKI Takashi Kyoto Univ., Dept. of Electrical Eng., Associate Professor, 工学部, 助教授 (10165459)
|
|---|
| Project Period (FY) |
1988 – 1989
|
| Keywords | amorphous semiconductor / heterojunction / hot-electron / tunneling conduction / amorphous silicon / amorphous silicon carbon / superstructure |
|---|
| Research Abstract |
In this paper, we discuss microscopic structures and electrical properties of the a-Si : H/a-Si_<1-x>C_x : H (x=0.2, 0.5 and 0.8) ultra-thin multilayers fabricated by a glow discharge method.
The scheme of hydrogen incorporation in the well layer was determined by the analysis of infrared absorption measurements over the range of the well-layer thickness from 11 to 510 A. Hydrogen atoms are incorporated into the well layer in the form of Si-H_2 dihydride bonds up to a well-layer thickness of 40 A, and then Si-H monohydride bonds are formed. Even up to. 100 A, the Si-H_2 dihydride bonds are dominant rather than the Si-H monohydride bonds.
The transport mechanism across the multilayers has been investigated. In a-Si : H/a-Si_<0.2>C_<0.8> : H multilayers with p-type well layers, Schottky mission conduction is dominant at first and then the Fowler-Nordheim conduction is observed with increasing applied voltage. For p-type well layers, room-temperature tunneling currents is demonstrated on an optimum condition for the doping level in the well layer.
|
Research Products
(7 results)
