1989 Fiscal Year Final Research Report Summary
CRYSTALLIZATION BEHAVIOR OF INORGANIC AMORPHOUS MATERIALS
| Project/Area Number |
63470060
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学
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| Research Institution | KYOTO INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
OTA Rikuo Kyoto Institute of Technology Professor, 工芸学部, 教授 (30026124)
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| Co-Investigator(Kenkyū-buntansha) |
FUKUNAGA Jiro Kyoto Institute of Technology Lecturer, 工芸学部, 講師 (80027797)
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| Project Period (FY) |
1988 – 1989
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| Keywords | SiO_2-MgO system / B_2O_3-Na_2O system / Amorphous region / Glass region / Sputtering / Electron beam diffraction / B_2O_3-Na_2O-NaF system / Crystalliization |
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| Research Abstract |
(1) Amorphous regions in the SiO_2 - MgO system and B_2O_3 - Na_2O system by RF-sputtering method. Sputtered thin layers of about 10mu m thick was found to be amorphous in the SiO_2 = 100 - 83 mol% composition, while that of 10nm thick was found toin the SiO_2 = 100 - 90 mol% composition. In the B_2O_3- Na_2O system. in put powers of 30, 50 and 10OW were tested. Depending upon the power applied and the duration time of sputtering. amorphous regions varied. Lower power(30W) and shorter suputtering time(1h) was found favorable for greater amophous regions. It was suggested that the structure of sputtered layer (porosity) or particle size distribution might have influenced the cooling efficiency of the atomized particles. The glass forming region on water cooling was SiO_2 = 100 - 50 mol%. It was demonstrated that the glass-foming tendency favors the amorphous regions in the sputtering process.
(2) Crystallization kinetics of the B_2O_3- Na_2O - NaF glasses Glasses of the composition 2B_2O_3(1-x)Na_2O(x)Na_2F_2 were heat-treated at 450 and 500ﾟC for up to 70hrs. Surface crystallization took place at x = 0.6 - 1.0 compositions. Internal nucleation took place at x = 0 - 0.4 compositions. Viscosity measurement was conducted to analyze the crystallization rate based on the proposed equations for erystallization and crystal growth rate. The importance of fusion entropy was stressed together with the kinetical parameters.
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