1989 Fiscal Year Final Research Report Summary
Investigation of Electron-Transfer Process on Photoexcited Heterogeneous Interface and Its New Application
Project/Area Number |
63470064
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Research Category |
Grant-in-Aid for General Scientific Research (B)
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Allocation Type | Single-year Grants |
Research Field |
工業物理化学
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Research Institution | The University of Tokyo |
Principal Investigator |
FUJISHIMA Akira University of Tokyo, Professor, 工学部, 教授 (30078307)
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Co-Investigator(Kenkyū-buntansha) |
KATO Takashi University of Tokyo, Assistant, 工学部, 助手 (70214377)
BABA Ryo University of Tokyo, Assistant, 工学部, 助手 (70198951)
ITOH Kiminori Yokohama National University Assoiate Professor, 工学部, 助教授 (40114376)
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Project Period (FY) |
1988 – 1989
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Keywords | semiconductor electrode / scanning tunneling microscopy / TiO_2 / electron transfer |
Research Abstract |
It is important to investigate the mechanism of reactions on photoexited semiconductor. In this study, we have employed STM (scanning tunneling microscopy) and a dynamic potential pulse technique as new methods. The following results have been obtained. (1) We built a STM instrument specially designed for observation of semicondoctor-solution interface. A preliminary observation gave an atomic image of HOPG. High-quality images Of MoS_2 was also obtained by STM. (2) A dynamic potential pulse technique has been used to explore the controlling factors of the charge transfer mechanism at semiconductor/electrolyte junction. Potential pulses were applied in the order of nanoseconds to a n-SiC single crystal electrode in various redox electrolytes. (3) High resolution images were obtained on heterogenious interface by a new method of photoelectro chemistry. (4) Activity of photochemical reaction on the photoexcited surface of a semiconductor was applied to kill cancer cells. A typical cancer cell, HeLa cell was killed by photoexcited TiO_2 ultrafine particles. TiO_2 particles modified by hematoporphyrine also showed a good activity.
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Research Products
(19 results)