1989 Fiscal Year Final Research Report Summary
Crystal Growth of Zinc Selenide from Melt under High Inert Gas Pressure for Homo-epitaxial Substrate
| Project/Area Number |
63550025
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied materials
|
|---|
| Research Institution | Okayama University of Science |
|---|
Principal Investigator |
OHMORI Kenzo Faculty of Science, Okayama University of Science. Professor, 理学部, 教授 (30068895)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SAITO Hiroshi Faculty of Science, Okayama University of Science. Professor, 理学部, 教授 (20013526)
OHISHI Masakazu Faculty of Science, Okayama University of Science. Professor, 理学部, 教授 (40068911)
|
|---|
| Project Period (FY) |
1988 – 1989
|
| Keywords | Zinc Selenide single crystal / Melt grown under inert gas pressure / Bridgman method / Boron Nitride / Pyloritic Boron Nitride |
|---|
| Research Abstract |
We have been grown single crystal of Zinc Selenide (ZnSe) from the melt under inert gas pressure ( Bridgman method ), and have made fundamental research to develops the opto-electronic devices for blue light region. The purpose of this study is to grow ZnSe with large single grain for the substrate which can be used for homo-epitaxial growth of ZnSe by molecular-beam epitaxy. For this purpose, the materials and shape of the crucible and also the effect of encapsulation materials on grown crystal are examined. The obtained results are summarized as follows ;
1. Boron Nitride (BN) crucible with encapsulation materials : In order to minimize the evaporabon of Zn and Se, the upper part of ZnSe melt was covered with encapsulation materials such as CaF_2 + MgF_2,KF + MgF_2. In these condition no good crystal was obtained because these encapsulation materials reacted with molten ZnSe.
2. BN crucible encapsulated with W (tangustan) : Instead of above encapsulation materials, ZnSe melt were covered with high-purity tungusten disk, which is used for target material for sputtering. This combination also did not give good homogeneous crystal.
3.PBN(Pylorific Boron Nitride) crucible with closed bottom No homogeneous single crystals were grown.
4.PBN crucible with small capillary tube at the bottom: PBN crucible which is not easy to reform, was supported in the BN holder with no encapsulation materials. Two types of crucible (angle of crucible tip:30ﾟ and 45ﾟ) are examined. We could grow good single crystalline ZnSe under the growth condition; pulling down speed: 7.5 mm/h, angle=45ﾟ. However, the reproducibility is not sufficient at present Further improvement in growth condition is needed.
Summarizing the results, PBN is suitable for the crucible material rather than graphite and BN, and the effect of encapsulation of melt were not appreciated.
|
