1989 Fiscal Year Final Research Report Summary
Research of Integrated Thick Film Gas Sensors
| Project/Area Number |
63550241
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | NIHON UNIVERSITY |
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Principal Investigator |
NITTA Masayoshi Nihon University, Industrial Technology, Professor, 生産工学部, 教授 (80059782)
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| Co-Investigator(Kenkyū-buntansha) |
ABE Osamu Nihon University, Industrial Technology, Research Assistant, 生産工学部, 助手 (50130414)
KANEFUSA Shinji Nihon University, Industrial Technology, Instructor, 生産工学部, 講師 (20060246)
TAKETA Yoshiaki Nihon University, Industrial Technology, Professor, 生産工学部, 教授 (40059217)
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| Project Period (FY) |
1988 – 1989
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| Keywords | Gas sensor / Thick film / Thick film resistor / Stannic oxides / Ruthenium oxides / Integration |
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| Research Abstract |
In general, the sensitivities of SnO_2-based sensors to reducing gases decrease with the addition of silica, which is mixed in order to improve the mechanical strength of sensors. It was found that sensors made of SnO_2 mixed with GeO_2(40-50%) reduced the deterioration in the sensitivity due to the adding of silica. However, the properties of sensors became unstable. Therefore, the integrated sensors by SnO_2 mixed with ThO_2 instead of GeO_2 were fabricated. Alumina substrate of 0.5 x 1 inch square was used to integrate five different elements such as Pd(1%)- SnO_2(335ﾟC), {Pd(1%),ThO_2(5%)}-SnO_2(335ﾟC), Pd(5%)-SnO_2(300ﾟC), Pd(3%)-SnO_2(235ﾟC), Pd(3%)-SnO_2 (190ﾟC). It was found that the detection of the constituents of a gas mixture of H_2, CO, and CH_4 could be done by comparing the properties among the five elements.
Several kinds of metal-phthalocyanine compounds(Pc) were used as gas sensitive pastes of organic semiconductors. Sensors made by PbPc mixed with Pd(3%) and RuO_2(10%) exhibited high sensitivity to H_2 and CO gas at 150 -200ﾟC of sensor temperature. It was found that the sensor could detect selectively H_2 and CO, since its resistivity decreased with exposure to H_2 and increased with exposure to CO.
It was found that the electrical properties and stabilities of thick film resistors depended upon the conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the glass, mixing ratios of the conductive element and glass, and firing temperatures and cycles. It was also found that a resistor with high stability in the high temperature region could be obtained by using a lead borosilicate glass of which average particle size was 1 - 2 mu m and Al_2O_3 as a filler.
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Research Products
(12 results)
