1989 Fiscal Year Final Research Report Summary
Crystallography of Thin Metal Film Deposited onto Planar and Spherical Metal Substrates
| Project/Area Number |
63550473
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Physical properties of metals
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KATO Masaharu Tokyo Institute of Technology, The Graduate School at Nagatsuta, Associate Professor, 大学院総合理工学研究科, 助教授 (50161120)
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| Co-Investigator(Kenkyū-buntansha) |
WADA Minoru Tokyo Institute of Technology, The Graduate School at Nagatsuta, Associate Profe, 大学院総合理工学研究科, 助教授 (20108236)
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| Project Period (FY) |
1988 – 1989
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| Keywords | Thin film / Deposition / Crystallography / Epitaxy / Interface / FIM |
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| Research Abstract |
During the two-year period of this project, the following achievements have been made.
1. A new deposition apparatus with better vacuum has been constructed using the equipment budgets of this Grant-in-Aid.
2. Copper and iron were chosen, one as a deposit crystal and the other as a substrate crystal. (1) Familiar orientation relationships, such as the Kurdjumov-Sachs (K-S) relationship, were found between deposit and substrate crystals when low-index substrate planes were used. On the other hand, several new orientation relationships were found to exist on some higher-index substrate planes. (2) Iron deposited on copper as thin film layers with domain structure. However, copper deposited on iron as many fine islands.
3. Iron was deposited on an [001]-oriented needle-like specimen of copper. The semi-spherical tip of the specimen was examined on a field-ion microscope (FIM). It has been found that four separate regions of iron film exist around the [001] pole and each region shows the K-S relationship to the copper substrate.
4. In the light of the experimental results, the following three factors have been identified critical in determining epitaxial relationships on given substrate orientations: (1) the Bain correspondence between the two crystals, (2) the good matching of the two crystals at the interface, and (3) minimization of misfit strain energy.
5. Using the infinitesimal-deformation approach, the crystallography of martensites or precipitates in a bulk material has also been discussed theoretically.
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