1989 Fiscal Year Final Research Report Summary
Study on Fabrication Technology of GaInAs/InP Device with Ultrafine Structure
| Project/Area Number |
63850077
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| Research Category |
Grant-in-Aid for Developmental Scientific Research
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| Allocation Type | Single-year Grants |
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| Research Field |
電子機器工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
FURUYA Kazuhito Tokyo Inst. Technology, Department of Electrical and Electronic Engineering Professor, 工学部, 教授 (40092572)
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| Co-Investigator(Kenkyū-buntansha) |
MIYAMOTO Yasuyuki Tokyo Inst. Technology, Department of Electrical and Electronic Engineering Rese, 工学部, 助手 (40209953)
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| Project Period (FY) |
1988 – 1989
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| Keywords | Ultrafine Structure / Organometallic Vapor Phase Epitaxy / Electron Beam Exposure / Wet Chemical Etching / Electron Wave Reflection / Dry Etching / Quantum Wire Laser / OMVPE Embedding |
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| Research Abstract |
We have investigated the electron bean exposure and the organometalic vapor phase epitaxy (OMVPE) to create GaInAs/InP ultrafine periodic structure. The following is a summary of our result. 1. We have optimized the OMVPE condition to attain back ground carrier density as low as 10^<13>/cm^3. We have observed definite exciton peaks in room-temperature absorption spectra, the electron wave reflection at heterojunctions showing excellent heterointerfaces. 2. We have attained to draw 40nm-pitch periodic pattern by the electron beam exposure under condition newly obtained; the resist layer-thickness as thin as 40nm, the acceleration voltage as high as 50 KV, diluted developer and lowered-temperature and reduced-period post baking. 3. We have investigated to transfer the pattern to the surface of the semiconductor crystal without introducing of the crystal damage. By the two-step wet chemical etching invented by us, we have attained 50nm-pitch periodic structures which is the world finest period attained by lithography techniques 4. As an alternative transfer method, we have studied the OMVPE selective growth technique to attain 70nm-pitch structures. 5.We have investigated the reactive ion etching to transfer the pattern to obtain promising results. By reducing the acceleration voltage, a strong photoluminescence property have been preserved in samples etched vertically. 6. We have created completely embedded GaInAs/InP ultrafine(70nm-pitch and 40nm-depth) periodic structures by OMVPE regrowth at a lowered growth temperature(520 C). The lasing of the quantum wire laser fabricated by this technique have shown quite good crystal quality.
In short, we have achieved to create GaInAs/InP ultrafine periodic structures without introducing a serious damage. Further reduction in the pitch and a detail study about interface properties to improve the quality of the regrown crystal are very important theme as the next stage.
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