-
- Kamiyama Satoshi
- Meijo University
-
- Takeuchi Tetsuya
- Meijo University
-
- Iwaya Motoaki
- Meijo University
-
- Akasaki Isamu
- Meijo University Nagoya University
Bibliographic Information
- Other Title
-
- GaN系量子殻構造の成長と光学特性評価
- GaNケイ リョウシカクコウゾウ ノ セイチョウ ト コウガク トクセイ ヒョウカ
Search this article
Abstract
<p> Growth and optical properties of GaN nanowires (NWs) and related technologies are discussed, in terms of their applications to optoelectronic devices. Although few reports regarding GaN-based NWs applied to laser diodes have been published, it will atract much attentions in the near future. This paper presents that GaN NWs and surounding multi-quantum-shell (MQS) active medium have a high potential to improve the performance of lasers because of its high 3D optical cofinement factor. To grow GaN NWs with (0001) tip-plane, pulsed mode MOVPE, which provides effectively very low V/III ratios, and relatively high growth temperature are essential. The formation of (0001) tip-plane improves the composition uniformity of GaInN/GaN MQS. PL intentisy per excited volume from MQS is comparable to that from conventional 2D MQW. The GaN NWs and MQS will provide us a next generation platform of optoelectronic devices.</p>
Journal
-
- Journal of the Japanese Association for Crystal Growth
-
Journal of the Japanese Association for Crystal Growth 45 (1), n/a-, 2018
The Japanese Association for Crystal Growth
- Tweet
Details
-
- CRID
- 1390282680874896768
-
- NII Article ID
- 130006727555
-
- NII Book ID
- AA12677650
-
- ISSN
- 21887268
- 21878366
- 03856275
-
- NDL BIB ID
- 028968408
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- CiNii Articles
- KAKEN
-
- Abstract License Flag
- Disallowed