High quality Al<sub>0.99</sub>Ga<sub>0.01</sub>N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy
Abstract
<jats:title>Abstract</jats:title> <jats:p>We systematically investigated metalorganic vapor phase epitaxy (MOVPE) growths of AlN layers with trimethylgallium (TMGa) supply on sapphire substrates at 1100–1250 °C. We found that Ga incorporations into the AlN layers contributed to smooth surfaces covered with step terraces at the early stage of the Al(Ga)N growth. In addition, a GaN mole fraction leading to the smooth surfaces was found to be around 2–3% at the beginning of growth. The Ga supply during the AlN layer growth at 1150 °C provided very smooth Al<jats:sub>0.99</jats:sub>Ga<jats:sub>0.01</jats:sub>N layers on sapphire substrates.</jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 56 (1), 015504-, 2016-12-16
IOP Publishing
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Details
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- CRID
- 1360284924867584512
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- NII Article ID
- 210000147346
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN