Electrical properties of relaxed p-GaN/p-AlGaN superlattices and their application in ultraviolet-B light-emitting devices

Abstract

<jats:title>Abstract</jats:title> <jats:p>The relaxation ratio of p-GaN/p-AlGaN superlattices was controlled by using different AlGaN underlying layers and the effects of relaxation on the electrical properties were investigated. High hole concentrations over 1 × 10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup> at room temperature and low activation energies below 120 meV were obtained regardless of the relaxation ratio. Using a p-GaN/p-Al<jats:sub>0.5</jats:sub>Ga<jats:sub>0.5</jats:sub>N superlattice, current injection at 1 A corresponding to 33.3 kA cm<jats:sup>−2</jats:sup> was achieved without a significant drop in output power in an ultraviolet-B light-emitting diode including undoped AlGaN waveguide layers.</jats:p>

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