Electrical properties of relaxed p-GaN/p-AlGaN superlattices and their application in ultraviolet-B light-emitting devices
Abstract
<jats:title>Abstract</jats:title> <jats:p>The relaxation ratio of p-GaN/p-AlGaN superlattices was controlled by using different AlGaN underlying layers and the effects of relaxation on the electrical properties were investigated. High hole concentrations over 1 × 10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup> at room temperature and low activation energies below 120 meV were obtained regardless of the relaxation ratio. Using a p-GaN/p-Al<jats:sub>0.5</jats:sub>Ga<jats:sub>0.5</jats:sub>N superlattice, current injection at 1 A corresponding to 33.3 kA cm<jats:sup>−2</jats:sup> was achieved without a significant drop in output power in an ultraviolet-B light-emitting diode including undoped AlGaN waveguide layers.</jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 58 (SC), SC1016-, 2019-05-08
IOP Publishing
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Details
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- CRID
- 1360284924859254272
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- NII Article ID
- 210000155940
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN