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Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-

Administrative Group

Project AreaOptoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
Project/Area Number 18069013
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionRitsumeikan University

Principal Investigator

NANISHI Yasushi  立命館大学, 立命館グローバル・イノベーション研究機構, 教授 (40268157)

Co-Investigator(Kenkyū-buntansha) YOSHIKAWA Akihiko  千葉大学, 工学部, 教授 (20016603)
AMANO Hiroshi  名古屋大学, 理工学部, 教授 (60202694)
KISHINO Katsumi  上智大学, 理工学部, 教授 (90134824)
KAWAKAMI Yoichi  京都大学, 工学研究科, 教授 (30214604)
ARAKI Tsutomu  立命館大学, 理工学, 准教授 (20312126)
FUNATO Mitsuru  京都大学, 工学研究科, 准教授 (70240827)
Research Collaborator AKASAKI Isamu  名城大学・名古屋大学, 教授・特別教授・名誉教授
SASAKI Akio  京都大学・大阪電気通信大学, 名誉教授
TAKAHASHI Kiyoshi  東京工業大学・最高裁判所, 名誉教授・専門委員
NISHINAGA Tatau  豊橋技術科学大学・東京大学, 客員教授・名誉教授
Project Period (FY) 2006 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥22,300,000 (Direct Cost: ¥22,300,000)
Fiscal Year 2011: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 2010: ¥4,300,000 (Direct Cost: ¥4,300,000)
Fiscal Year 2009: ¥4,300,000 (Direct Cost: ¥4,300,000)
Fiscal Year 2008: ¥4,300,000 (Direct Cost: ¥4,300,000)
Fiscal Year 2007: ¥4,300,000 (Direct Cost: ¥4,300,000)
Fiscal Year 2006: ¥2,100,000 (Direct Cost: ¥2,100,000)
Keywords窒化物半導体 / 光デバイス / 結晶成長 / 半導体物性 / 紫外 / 赤外 / 発光デバイス / 窒化インジウム / 窒化アルミニウム / バンドギャップ
Research Abstract

研究成果とりまとめとして、最終成果報告のための公開シンポジウムを下記日程で開催した。
文部科学省 科学研究費補助金 特定領域研究 最終成果報告公開シンポジウム
窒化物光半導体のフロンティア-材料潜在能力の極限発現-
日時:平成23年8月3日(水)~4日(木)(2日間)
場所:東京ガーデンパレス(東京都文京区)
参加者:150名
内容:研究代表者(計画研究、全公募研究を含む)に最終成果報告講演各研究課題研究担当者らによるポスターセッション
概要:まずはじめに、領域代表者 立命館大学 名西から、本特定領域全体の目的、構想、研究体制、主な研究成果に関するまとめの発表がなされた。その後、A03短波長デバイス基盤技術総括 名古屋大学 天野、A04長波長デバイス基盤技術総括 上智大学 岸野、A02物性評価総括 千葉大学 吉川、A01結晶成長技術総括 立命館大学 名西から順に各研究項目ごとに得られた成果の総括と各研究成果内容が報告された。その後、第1日目,2日目を通じて、各計画研究、公募研究代表者からの成果発表がなされた。また第1に目の午後には、各研究課題の研究担当者らによるポスタープレゼンテーションが行われ、参加者との活発な研究ディスカッションが繰り広げられた。

Report

(8 results)
  • 2011 Annual Research Report
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report   Self-evaluation Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • Research Products

    (70 results)

All 2011 2010 2009 2008 2007 Other

All Journal Article (13 results) (of which Peer Reviewed: 13 results) Presentation (52 results) Remarks (5 results)

  • [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011

    • Author(s)
      K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011

    • Author(s)
      T.Yamaguchi, Y.Nanishi
    • Journal Title

      Proceedings of SPIE photonic West 2011

      Volume: 7939 Pages: 793904-793904

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011

    • Author(s)
      T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • NAID

      210000070345

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010

    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(a)

      Volume: 207 Pages: 1356-1360

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010

    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Journal Title

      Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)

      Pages: 92-95

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010

    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • NAID

      210000138257

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure2010

    • Author(s)
      J.Ibanez, A.Segura, F.J.Manjon, L.Artus, T.Yamaguchi, Y.Nanishi
    • Journal Title

      Appl.Phys.Lett.

      Volume: 96

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers2010

    • Author(s)
      V.Darakchieva, M.-Y.Xie, N.Franco, F.Giuliani, B.Nunes, E.Alues, C.L.Hsiao, L.C.Chen, T.Yamaguchi, Y.Takagi, K.Kawashima, Y.Nanishi
    • Journal Title

      J.Appl.Phys.

      Volume: 108

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Indium droplet elimination by radical beam irradiation for reproducible and high-quality growth of InN by RF molecular beam epitaxy2009

    • Author(s)
      T. Yamaguchi, Y. Nanishi
    • Journal Title

      Appl. Phys. Express 2

      Pages: 51001-51001

    • NAID

      10025085943

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix2008

    • Author(s)
      A. Yoshikawa, S.B. Che, N. Hashimoto, H. Saito, Y. Ishitani, X.Q. Wang
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1551-1559

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices2008

    • Author(s)
      H. Amano, M. Imura, M. Iwaya, S. Kamiyama, I. Akasaki
    • Journal Title

      Mater. Sci. Forum 590

      Pages: 175-210

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular beam epitaxy2008

    • Author(s)
      K. Kishino, T. Hoshino, S. Ishizawa, A. Kikuchi
    • Journal Title

      Electron. Lett. 44

      Pages: 819-821

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008

    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Appl. Phys. Express 1

    • NAID

      10024292227

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価2011

    • Author(s)
      森本健太、三木彰、山口智弘、前田就彦、荒木努、名西〓之
    • Organizer
      2011年春季 第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学 神奈川県厚木市
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証2011

    • Author(s)
      櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
    • Organizer
      2011年春季 第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学 神奈川県厚木市
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011

    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Granada Spain
    • Year and Date
      2011-03-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011

    • Author(s)
      T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya institute of technology, Aichi Japan
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011

    • Author(s)
      T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya institute of technology, Aichi Japan
    • Year and Date
      2011-03-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011

    • Author(s)
      T.Yamaguchi, Y.Nanishi
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      San Francisco, CA USA
    • Year and Date
      2011-01-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Nano-Photonics2010

    • Author(s)
      Y.Nanishi
    • Organizer
      3rd GIST Information and Mechatronics Week 2010
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-12-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010

    • Author(s)
      名西〓之、山口智広、王科、荒木努、Euijoon Yoon
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      九州大学伊都キャンパス福岡県福岡市
    • Year and Date
      2010-11-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長2010

    • Author(s)
      山下修平、山口智広、荒木努、名西〓之
    • Organizer
      平成22年 電気関係学会関西連合大会
    • Place of Presentation
      立命館大学キャンパス滋賀県草津市
    • Year and Date
      2010-11-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討2010

    • Author(s)
      荒木努、川島圭介、山口智広、名西〓之
    • Organizer
      2010年度 電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学中之島センター大阪府大阪市
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Recent Research Activities in Japan toward Nitride Semiconductor Opto-electronics Frontier2010

    • Author(s)
      Y.Nanishi
    • Organizer
      Korea Optoelectronic Engineering Society
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-10-08
    • Related Report
      2010 Annual Research Report
  • [Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure2010

    • Author(s)
      T.Yamaguchi, Y.Nanishi
    • Organizer
      2010 International Coference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo Univ, Japan
    • Year and Date
      2010-09-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010

    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] Raman scattering study of the temperature dependence of phonons in InN2010

    • Author(s)
      N.Domenech-Amador, L.Aruzs, R.Cusco, J.Ibanez, T.Yamaguchi, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Evidence of Rectification in InN pn Junctions2010

    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Free Hole Concentration and Mobility in InN : Mg2010

    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Unintentional incorporation of hydrogen in InN : diffusion kinetics and effect of surface orientation2010

    • Author(s)
      V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, L.Artus, D.Rogala, H.-W.Becker, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Wet Etching Process for InN Device Fabrication2010

    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma2010

    • Author(s)
      T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Mg doped InN and search for holes2010

    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010

    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-21
    • Related Report
      2010 Annual Research Report
  • [Presentation] TEMを用いたDERI法ドープInNの極微構造評価2010

    • Author(s)
      坂本努、山口智広、岩本亮輔、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] DERI法を用いたInGaN成長と組成制御への試み2010

    • Author(s)
      岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用2010

    • Author(s)
      三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] DERI法InGaN成長を用いた厚膜化への試み2010

    • Author(s)
      上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Growth and Characterization of InN-Related Materials2010

    • Author(s)
      Y.Nanishi
    • Organizer
      Rainbow Second Training Workshop
    • Place of Presentation
      Madrid Spain
    • Year and Date
      2010-08-31
    • Related Report
      2010 Annual Research Report
  • [Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010

    • Author(s)
      T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      16th International Conference on Molecular Beam Epitaxy (MBE 2010)
    • Place of Presentation
      Berlin Germany
    • Year and Date
      2010-08-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications2010

    • Author(s)
      Y.Nanishi, T.Yamaguchi, E.Yoon
    • Organizer
      The second LED domestic conference
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-08-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE2010

    • Author(s)
      T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG16)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-08-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010

    • Author(s)
      F.J.Manjon, J.Ibanez, A.Segura, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
    • Organizer
      48th European High Pressure Research Group Conference (EHPRG)
    • Place of Presentation
      Uppsala Sweden
    • Year and Date
      2010-07-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Forty years research toward compound semiconductor frontiers-Tributary road from GaAs to InN through GaN-2010

    • Author(s)
      Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Wet Etching by KOH for InN Device Fabrication2010

    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE2010

    • Author(s)
      T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films grown by RF-MBE2010

    • Author(s)
      K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Growth, Monitoring, P-type doping and MQW Structure Fabrication by DERI Method2010

    • Author(s)
      Y.Nanishi
    • Organizer
      The international worskshop on modern and advanced phenomena in wurtzite semiconductors
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Evidence of Free Holes in Mg Doped InN2010

    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
    • Related Report
      2010 Annual Research Report
  • [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010

    • Author(s)
      T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
    • Related Report
      2010 Annual Research Report
  • [Presentation] Electronic Materials Conference 2010 (EMC2010)2010

    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
    • Organizer
      Electronic Materials Conference 2010 (EMC2010)
    • Place of Presentation
      Notre Dame, Indiana, USA
    • Year and Date
      2010-06-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Hydrogen in InN : Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material2010

    • Author(s)
      V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
    • Organizer
      CIMTEC2010 (5th Forum on New Materials)
    • Place of Presentation
      Montecatini Terme, Tuscany Italy
    • Year and Date
      2010-06-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010

    • Author(s)
      J.Ibanez, A.Segura, F.J.Manjon, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
    • Organizer
      2010 E-MRS Spring Meeting
    • Place of Presentation
      Strasbourg France
    • Year and Date
      2010-06-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010

    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Organizer
      22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Takamatsu symbol tower, Kagawa Japan
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report
  • [Presentation] Free-Charge Carrier Properties and Doping Mechanisms of Thin Films of InN and Related Alloys2010

    • Author(s)
      V.Darakchieva, M.Schubert, K.Lorenz, N.P.Barradas, E.Alves, T.Hofmann, B.Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
    • Organizer
      5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
    • Place of Presentation
      Albany, New York USA
    • Year and Date
      2010-05-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method2010

    • Author(s)
      Y.Nanishi, T.Yamaguchi
    • Organizer
      IX International Conference of Polish Society for Crystal Growth
    • Place of Presentation
      Gdansk-Sobieszewo Poland
    • Year and Date
      2010-05-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010

    • Author(s)
      T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-05-18
    • Related Report
      2010 Annual Research Report
  • [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断2010

    • Author(s)
      勝木拓郎、福本英太、山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学 三重県三重市
    • Year and Date
      2010-05-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010

    • Author(s)
      山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学 三重県三重市
    • Year and Date
      2010-05-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Japan-Korea Joint Symposium2010

    • Author(s)
      Y.Nanishi
    • Organizer
      Japan-Korea Joint Symposium
    • Place of Presentation
      Daejeon Korea
    • Year and Date
      2010-04-21
    • Related Report
      2010 Annual Research Report
  • [Presentation] 窒化物光半導体フロンティア領域開拓の現状2010

    • Author(s)
      名西〓之
    • Organizer
      LED総合フォーラム
    • Place of Presentation
      阿波銀ホール 徳島県徳島市
    • Year and Date
      2010-04-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Optical Hall Effect in InN : Bulk Doping Mechanism and Surface Electron Accumulation Properties2010

    • Author(s)
      V.Darakchieva, M.Schubert, T.Hofmann, Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W Tu, T.Yamaguchi, Y.Nanishi
    • Organizer
      PLCN10
    • Place of Presentation
      Cuernavaca Mexico
    • Year and Date
      2010-04-12
    • Related Report
      2010 Annual Research Report
  • [Presentation] 文部科学省 科研費 特定領域研究 窒化物光半導体のフロンティア 企画「紫外発光素子の進展」2009

    • Author(s)
      名西〓之、吉田治正、川上養一、平松和政、船戸充、川西英雄、平山秀樹、天野浩
    • Organizer
      2009年秋季 第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 窒化物光半導体のフロンティア-材料潜在能力の極限発現-2008

    • Author(s)
      名西〓之
    • Organizer
      特定領域研究公開シンポジウム「窒化物光半導体のフロンティア」-材料潜在能力の極限発現-
    • Place of Presentation
      学士会館(東京都)
    • Year and Date
      2008-08-01
    • Related Report
      2008 Annual Research Report
  • [Presentation] 「窒化物の新展開」特定領域研究企画「窒化物光半導体のフロンティア」-材料潜在能力の極限発現-2007

    • Author(s)
      名西〓之、藤岡洋、纐纈明伯、吉川明彦、川上養一、上殿明良、天野浩、平山秀樹、岸野克巳
    • Organizer
      2007年秋季 第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-05
    • Related Report
      2007 Annual Research Report
  • [Remarks] 研究成果公表の手段として、ホームページを開設し、領域の概要、研究項目、組織、研究会情報などを公開している

    • URL

      http://www.bkc.ritsumei.ac.jp/~tara/tokutei/index.htm

    • Related Report
      2010 Final Research Report
  • [Remarks]

    • URL

      http://www.ritsumei.ac.jp/~tara/tokutei/index.htm

    • Related Report
      2009 Annual Research Report
  • [Remarks] 研究成果公表の手段として、ホームページを開設し、領域の概要、研究項目、組織、研究会情報などを公開している。

    • URL

      http://www.bkc.ritsumei.ac.jp/~tara/tokutei/index.htm

    • Related Report
      2008 Self-evaluation Report
  • [Remarks]

    • URL

      http://www.ritsumei.ac.jp/~tara/tokutei/index.htm

    • Related Report
      2008 Annual Research Report
  • [Remarks]

    • URL

      http://www.ritsumei.ac.jp/~tara/tokutei/index.htm

    • Related Report
      2007 Annual Research Report

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Published: 2006-04-01   Modified: 2018-03-28  

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