| Budget Amount *help |
¥59,540,000 (Direct Cost: ¥45,800,000、Indirect Cost: ¥13,740,000)
Fiscal Year 2020: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
Fiscal Year 2019: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000)
Fiscal Year 2018: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2017: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
Fiscal Year 2016: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
|
|---|
| Outline of Final Research Achievements |
We have investigated interface properties of Schottky and MOS structures with a non-polar m-plane GaN surface and processed GaN surfaces by a plasma-assisted etching, an ion implantation and a high-temperature annealing. The detailed electrical characterization detected various kinds of electronic states created at the GaN surfaces. Then, a chemically stable HfSiOx gate with a high permittivity has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs), resulting in excellent I-V characteristics with a slight fluctuation of threshold voltage. In addition, a recess-gate GaN MOS HEMT was fabricated using an electrodeless photo-assisted electrochemical etching. The DC characterization showed a precise control of threshold voltage in the I-V characteristics of the recess-gate MOS HEMT.
|
