Characterization of Nano-Device Structures of InN-based III-nitrides by Extremely Wide Range Spectroscopy
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
|---|
| Project/Area Number |
18069002
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | Chiba University |
|---|
Principal Investigator |
YOSHIKAWA Akihiko Chiba University, 大学院・工学研究科, 教授 (20016603)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
ISHITANI Yoshihiro 千葉大学, 大学院・工学研究科, 教授 (60291481)
CHE Songbek 千葉大学, 大学院・工学研究科, 助教 (00361410)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
KUSAKABE Kazuhide 千葉大学, 大学院・工学研究科, 特任准教授 (40339106)
|
|---|
| Project Period (FY) |
2006 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥129,300,000 (Direct Cost: ¥129,300,000)
Fiscal Year 2010: ¥16,600,000 (Direct Cost: ¥16,600,000)
Fiscal Year 2009: ¥16,600,000 (Direct Cost: ¥16,600,000)
Fiscal Year 2008: ¥33,500,000 (Direct Cost: ¥33,500,000)
Fiscal Year 2007: ¥35,500,000 (Direct Cost: ¥35,500,000)
Fiscal Year 2006: ¥27,100,000 (Direct Cost: ¥27,100,000)
|
|---|
| Keywords | 窒化物半導体 / 窒化インジウム / 極広域分光 / キャリアダイナミクス / 表面・界面物性 / ナノ構造デバイス / MBEエピタキシャル / 超格子 / 擬似混晶 / 極広域分光計測 / ナノ構造光デバイス / MBE、エピタキシャル / 短周期超格子 / 光物性・分光計測 / 超格子・量子構造 / 光電子物性の赤外分光評価 / 空間・時間分解ルミネッセンス測定 / エピタキシ制御 / p型窒化インジウム / 窒化インジウム(InN) / 超格子・量子井戸 / バンドパラメータ / 分光エリプソメトリ / 貫通転位 |
|---|
| Research Abstract |
Nitride semiconductors can be applied to optical devices for the wavelength from ultraviolet of about 0.2μm to infrared of about 2μm. For the purpose of the extension of the applicable wavelength range to extremely shorter and longer sides, we have characterized the nanostructure and carrier dynamics, and have obtained the following achievements : (1) success in p-type conductivity and characterization of hole properties, (2) characterization of nonradiative carrier recombination processes of the activation energy and recombination processes both for p and n-type materials, (3) proposal of (InN)_m/(GaN)_n superlattices of "SMART" super-structures for the achievement of high quality pn-junction, and the first fabrication of the superlattice structures.
|
Report
(7 results)
Research Products
(279 results)
