Low temperature growth of InN films by pulsed excitation deposition
Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
Project/Area Number |
18069003
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Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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Allocation Type | Single-year Grants |
Review Section |
Science and Engineering
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Research Institution | The University of Tokyo |
Principal Investigator |
FUJIOKA Hiroshi The University of Tokyo, 生産技術研究所, 教授 (50282570)
|
Co-Investigator(Kenkyū-buntansha) |
太田 実雄 東京大学, 生産技術研究所, 助教 (60392924)
|
Co-Investigator(Renkei-kenkyūsha) |
OHTA Jitsuo 東京大学, 生産技術研究所, 助教 (60392924)
|
Project Period (FY) |
2006 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥66,200,000 (Direct Cost: ¥66,200,000)
Fiscal Year 2010: ¥11,600,000 (Direct Cost: ¥11,600,000)
Fiscal Year 2009: ¥11,600,000 (Direct Cost: ¥11,600,000)
Fiscal Year 2008: ¥11,600,000 (Direct Cost: ¥11,600,000)
Fiscal Year 2007: ¥15,700,000 (Direct Cost: ¥15,700,000)
Fiscal Year 2006: ¥15,700,000 (Direct Cost: ¥15,700,000)
|
Keywords | III族窒化物 / パルス励起堆積法 / 低温成長 / 窒化インジウム / 赤外発光素子 / 高速電子素子 |
Research Abstract |
We have developed a pulsed excitation deposition (PXD) technique for a low-temperature growth of InN-related semiconductors. We have succeeded in the growth of high quality InN, InAlN, and InGaN films by the use of PXD low-temperature growth. It was also found that it is possible to grow n-and p-type nitride films and to form a hetero-junction with an atomically flat interface by PXD. Fabrication of nitride-based devices such as light emitting diodes was demonstrated. These results indicate that the PXD low-temperature growth is suitable for the fabrication of InN-based optical and electronic devices.
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Report
(7 results)
Research Products
(210 results)
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[Journal Article] Fabrication and Characterization of AlN/InN Heterostructures2009
Author(s)
T.Fujii, K.Shimomoto, R.Ohba, Y.Toyoshima, K.Horiba, J.Ohta, H.Fujioka, M.Oshima, S.Ueda, H.Yoshikawa, K.Kobayashi
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Journal Title
Appl Phys.Exp. 2
Pages: 11002-11002
NAID
Related Report
Peer Reviewed
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[Presentation] Al2O3/InN界面の電子状態評価2011
Author(s)
大久保佳奈, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
Organizer
春季第58回応用物理学関係連合講演会
Place of Presentation
(予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
Year and Date
2011-03-25
Related Report
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[Presentation] 原子散乱表面分光法による半極性面AlN/ZnOの極性判定2011
Author(s)
小林篤, 上野耕平, 太田実雄, 藤岡洋, 尾嶋正治, 中西繁光, 東堤秀明
Organizer
春季第58回応用物理学関係連合講演会
Place of Presentation
(予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
Year and Date
2011-03-25
Related Report
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[Presentation] マイカ基板を用いたIII族窒化物LEDの作製2011
Author(s)
野村周平, 田村和也, 太田実雄, 井上茂, 藤岡洋
Organizer
春季第58回応用物理学関係連合講演会
Place of Presentation
(予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
Year and Date
2011-03-24
Related Report
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