| Budget Amount *help |
¥67,900,000 (Direct Cost: ¥67,900,000)
Fiscal Year 2010: ¥8,500,000 (Direct Cost: ¥8,500,000)
Fiscal Year 2009: ¥8,500,000 (Direct Cost: ¥8,500,000)
Fiscal Year 2008: ¥12,700,000 (Direct Cost: ¥12,700,000)
Fiscal Year 2007: ¥15,300,000 (Direct Cost: ¥15,300,000)
Fiscal Year 2006: ¥22,900,000 (Direct Cost: ¥22,900,000)
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| Research Abstract |
In this project, we have researched the growth of the high-quality and thick epitaxial layer of the group III nitrides by using a new HVPE growth method with controlling the molecules of source precursors. For Al-related nitrides, the molecule which doesn't react with quartz reactor was used and for In-related nitrides, the molecule which has a large formation energy of InN was used. As a result, we succeeded the growth of the high-quality and thick epitaxial layers of AlN, AlGaN and InN.
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