Thick epitaxial growth of AlN and AlGaN by using controlling molecules of source precursors
Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
Project/Area Number |
18069004
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Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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Allocation Type | Single-year Grants |
Review Section |
Science and Engineering
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Research Institution | Tokyo University of Agriculture and Technology |
Principal Investigator |
KOUKITU Akinori Tokyo University of Agriculture and Technology, 大学院・工学研究院, 教授 (10111626)
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Co-Investigator(Kenkyū-buntansha) |
KUMAGA Yoshinao 東京農工大学, 大学院・工学研究院, 准教授 (20313306)
MURAKAMI Hajime 東京農工大学, 大学院・工学研究院, 助教 (90401455)
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Project Period (FY) |
2006 – 2010
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Project Status |
Completed (Fiscal Year 2010)
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Budget Amount *help |
¥67,900,000 (Direct Cost: ¥67,900,000)
Fiscal Year 2010: ¥8,500,000 (Direct Cost: ¥8,500,000)
Fiscal Year 2009: ¥8,500,000 (Direct Cost: ¥8,500,000)
Fiscal Year 2008: ¥12,700,000 (Direct Cost: ¥12,700,000)
Fiscal Year 2007: ¥15,300,000 (Direct Cost: ¥15,300,000)
Fiscal Year 2006: ¥22,900,000 (Direct Cost: ¥22,900,000)
|
Keywords | 窒化物半導体 / 厚膜エピタキシー / 自立基板結晶 / Al系窒化物 / 原料分子制御法 / HVPE成 / HVPE成長 / AlN / AlGaN / AIN / AIGaN / A1系窒化物 / A1N / A1GaN / 結晶成長 / エピタキシャル / 結晶工学 |
Research Abstract |
In this project, we have researched the growth of the high-quality and thick epitaxial layer of the group III nitrides by using a new HVPE growth method with controlling the molecules of source precursors. For Al-related nitrides, the molecule which doesn't react with quartz reactor was used and for In-related nitrides, the molecule which has a large formation energy of InN was used. As a result, we succeeded the growth of the high-quality and thick epitaxial layers of AlN, AlGaN and InN.
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Report
(7 results)
Research Products
(210 results)
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[Journal Article] Al- and N-polar AIN laters layers on c-plane sapphire substrates by modified flow-modulation MOCVD2007
Author(s)
M. Takeuchi, H. Shimizu, R.Kajitami, K. Kawasaki, T.Kinoshita, K. Takada, H. Murakami, Y.Kumagai, Y. Kumagai, A. Koukitu, T. Koyama, S.F.Chichibue, Y. Aoyagi
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Journal Title
Jpn. J. Appl. Phys. 305
Pages: 360-365
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Peer Reviewed
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[Presentation] Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates2011
Author(s)
T.Nagashima, A.Hakomori, T.Shimoda, K.Hironaka, Y.Kubota, T.Kinoshita, R.Yamamoto, H.Yanagi, Y.Kumagai, A.Koukitu, K.Takada
Organizer
7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
Place of Presentation
高野山大学(和歌山県)(招待講演)
Year and Date
2011-03-16
Related Report
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[Presentation] Measurement of temperature dependent lattice constants of single crystal AlN and various starting substrates for the growth of AlN2011
Author(s)
R.Togashi, M.Sakai, T.Nagashima, J.Tajima, H.Murakami, H.Morioka, T.Yamauchi, K.Saito, Y.Kumagai, K.Takada, A.Koukitu
Organizer
7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
Place of Presentation
高野山大学(和歌山県)(招待講演)
Year and Date
2011-03-16
Related Report
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[Presentation] AlN及びAlN成長用初期基板の格子定数の温度依存性測定2010
Author(s)
酒井美希, 永島徹, 田島純平, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
Organizer
第71回応用物理学会学術講演会
Place of Presentation
長崎大学(長崎県)
Year and Date
2010-09-16
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[Presentation] Growth of InN Films by Hydride Vapor Phase Epitaxy2010
Author(s)
Yoshinao Kumagai, Rie Togashi, Hisashi Murakami, Akinori Koukitu
Organizer
The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14) DK1
Place of Presentation
Beijing, China 招待講演
Year and Date
2010-08-12
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[Presentation] Temperature dependence of the lattice constants of single crystal AlN2010
Author(s)
M.Sakai, J.Tajima, T.Nagashima, R.Togashi, H.Murakami, H.Morioka, T.Yamauchi, K.Saito, Y.Kumagai, K.Takada, A.Koukitu
Organizer
29th Electronic Materials Symposium (EMS-29)
Place of Presentation
ラフォーレ修善寺(静岡)
Year and Date
2010-07-15
Related Report
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[Presentation] Tri-halide vapor-phase epitaxy of GaN2010
Author(s)
Takayoshi Yamane, Hisashi Murakami, Koshi Hanaoka, Yoshinao Kumagai, Akinori Koukitu
Organizer
The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
Place of Presentation
Montpellier, France
Year and Date
2010-07-05
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[Presentation] 単結晶AlNの格子定数の温度依存性2010
Author(s)
酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
Organizer
日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
Place of Presentation
三重大学(三重県)
Year and Date
2010-05-14
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[Presentation] 高温その場X線回折による単結晶AlNの格子定数の温度依存性測定2010
Author(s)
酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
Organizer
第57回応用物理学関係連合講演会
Place of Presentation
東海大学(神奈川県)
Year and Date
2010-03-17
Related Report
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[Presentation] XPS spectra of(0001)and(000-1)GaN surfaces2009
Author(s)
Kazuyuki Noguchi, Tadashi Nozaki, Naoyuki Sakai, Yoshinao Kumagai, Akinori Koukitu, Tohru Honda
Organizer
The 8th International Conference on Nitride Semiconductors(ICNS-8)
Place of Presentation
ICC Jeju, Korea
Year and Date
2009-10-19
Related Report
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[Presentation] XPSを用いたGaN結晶の表面改質評価2009
Author(s)
野口和之, 野崎理, 渡邉謙二, 纐纈明伯, 熊谷義直, 本田徹
Organizer
日本結晶成長学会ナノエピ分科会 第1回窒化物半導体結晶成長講演会
Place of Presentation
東京農工大学(東京都)
Year and Date
2009-05-15
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[Presentation] Progress in Preparation of Freestanding AlN Substrates by Hydride Vapor Phase Epitaxy2008
Author(s)
Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
Organizer
International Workshop on Nitride Semiconductors 2008 (IWN2008) We2b-C1
Place of Presentation
Montreux Music and Convention Center, Montreux, Switzerland 招待講演
Year and Date
2008-10-08
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[Presentation] HVPE growth of AIN and AIGaN2007
Author(s)
Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
Organizer
15th International Conference on Crystal Growth
Place of Presentation
Utah, USA
Year and Date
2007-08-16
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[Book] 電子物性・材料の事典2006
Author(s)
纐纈明伯, (共著, 森泉豊栄, 岩本光正, 小田俊理, 山本寛, 川名明夫編)
Total Pages
696
Publisher
朝倉書店
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