Research for high-efficiency deep-UV emitting devices using quaternary InAlGaN nitride semiconductors
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
|---|
| Project/Area Number |
18069014
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | The Institute of Physical and Chemical Research |
|---|
Principal Investigator |
HIRAYAMA Hideki The Institute of Physical and Chemical Research, テラヘルツ量子素子研究チーム, チームリーダー (70270593)
|
|---|
| Project Period (FY) |
2006 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥67,800,000 (Direct Cost: ¥67,800,000)
Fiscal Year 2010: ¥7,600,000 (Direct Cost: ¥7,600,000)
Fiscal Year 2009: ¥7,600,000 (Direct Cost: ¥7,600,000)
Fiscal Year 2008: ¥7,600,000 (Direct Cost: ¥7,600,000)
Fiscal Year 2007: ¥20,400,000 (Direct Cost: ¥20,400,000)
Fiscal Year 2006: ¥24,600,000 (Direct Cost: ¥24,600,000)
|
|---|
| Keywords | 深紫外LED / AlGaN / InAlGaN4元混晶 / 内部量子効率 / 貫通転位密度 / 結晶成長 / 外部量子効率 / 注入効率 / InAlGaN / AlNテンプレート / 深外LED / AIGaN / InAIGaN / AINテンプレート / 紫外LED / 貫通転位 / 窒化物半導体 / InAlGN4元混晶 / 高輝度LED / p型半導体 / In組成変調 |
|---|
| Research Abstract |
High-efficiency deep-ultraviolet (DUV) semiconductor light sources with emission wavelengths between 250-350 nm are in strong demand for various applications including sterilization, water purification, medicine, and biochemistry. In this work, we realized high-efficiency DUV light-emitting diodes (LEDs) by developing low threading-dislocation density AlN crystals using pulse gas feeding growth method, by realizing high internal-quantum efficiency (IQE) emitting layers using quaternary InAlGaN quantum wells (QWs) and by improving injection efficiency using multi-quantum barrier (MQB) electron-blocking layers (EBLs).
|
Report
(7 results)
Research Products
(239 results)
