SourcesTheoretical Design of Efficient Spin Sources
| Project Area | Creation and control of spin current |
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| Project/Area Number |
19048002
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
三浦 良雄 東北大学, 電気通信研究所, 助教 (10361198)
阿部 和多加 東北大学, 電気通信研究所, 助教 (00361197)
小田 竜樹 金沢大学, 大学院・自然科学研究科, 准教授 (30272941)
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| Co-Investigator(Renkei-kenkyūsha) |
MIURA Yoshio 東北大学, 電気通信研究所, 助教 (10361198)
ABE Kazutaka 東北大学, 電気通信研究所, 助教 (00361197)
ODA Tatsuki 金沢大学, 理工研究域数物科学系, 教授 (30272941)
KIMURA Akio 広島大学, 大学院・理学研究科, 准教授 (00272534)
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| Project Period (FY) |
2007 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥15,800,000 (Direct Cost: ¥15,800,000)
Fiscal Year 2010: ¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2009: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 2008: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 2007: ¥3,500,000 (Direct Cost: ¥3,500,000)
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| Keywords | スピントロニクス / スピン流 / 第一原理計算 / ハーフメタル / 垂直磁気材料 / 計算物理 / ホイスラー合金 / 磁気トンネル接合 / 巨大磁気抵抗素子 / 磁気異方性 / 電界制御 / スピンエレクトロニクス / 形状記憶合金 / ヘテロ接合 / スピン注入 / 量子ナノ構造 |
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| Research Abstract |
We carried out theoretical design of efficient spin sources on the basis of first-principles calculations in order to improve the output of magnetoresistive devices with use of highly spin-polarized materials (half metals) or perpendicularly magnetized materials and to improve the efficiency of spin injection into semiconductors. We successfully proposed the hetero-junctions which preserve high spin polarization even at the interfaces between half metals and non-magnetic materials. We elucidated the effects of atomic disorder or thermal fluctuation of spin configurations on spin-dependent transport properties. We also investigated the modulation of magnetic anisotropy by external electric field.
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Report
(6 results)
Research Products
(126 results)
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[Journal Article] Mechanism of large magnetoresistance in Co_2MnSi/Ag/Co_2MnSi devices with current perpendicular to the plane2010
Author(s)
Y. Sakuraba, K. Izumi, T. Iwase, S. Bosu, K. Saito, K. Takanashi, Y. Miura, K. Futatsukawa, K. Abe, M. Shirai
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Journal Title
Physical Review B
Volume: Vol.82, Article No.094444
Pages: 1-5
Related Report
Peer Reviewed
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[Journal Article] Role of electronic structure on martensitic phase transition of Ni_2Mn_<1+x>Sn_<1-x> studied by hard-x-ray photoelectron sprctroscopy and ab initio calculation2010
Author(s)
M. Ye, A. Kimura, Y. Miura, M. Shirai, Y. Cui, K. Shimada, H. Namatame, M. Taniguchi, S. Ueda, K. Kobayashi, R. Kainuma, T. Shishido, K. Fukushima, T. Kanomata
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Journal Title
Physical Review Letters
Volume: Vol.104, Article No.176401
Pages: 1-4
Related Report
Peer Reviewed
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[Journal Article] Absence of temperature dependence of the valence-band spectrum of Co_2MnSi2009
Author(s)
K. Miyamoto, A. Kimura, Y. Miura, M. Shirai, M. Ye, Y. Cui, K. Shimada, H. Namatame, M. Taniguchi, Y. Takeda, Y. Saitoh, E. Ikenaga, S. Ueda, K. Kobayashi, T. Kanomata
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Journal Title
Physical Review B
Volume: Vol.79, Article No.100405
Pages: 1-4
Related Report
Peer Reviewed
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[Journal Article] Absence of temperature dependence of the valence-band spectrum of Co_2MnSi2009
Author(s)
K. Miyamoto, A. Kimura, Y. Miura, M. Shirai, M. Ye, Y. Cui, K. Shimada, H. Namatame, M. Taniguchi, Y. Takeda, Y. Saitoh, E. Ikenaga, S. Ueda, K. Kobayashi, T. Kanomata
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Journal Title
Physical Review B Vol.79, Article No.100405(R)
Pages: 1-4
Related Report
Peer Reviewed
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