|Budget Amount *help
¥124,930,000 (Direct Cost: ¥96,100,000、Indirect Cost: ¥28,830,000)
Fiscal Year 2017: ¥24,180,000 (Direct Cost: ¥18,600,000、Indirect Cost: ¥5,580,000)
Fiscal Year 2016: ¥22,880,000 (Direct Cost: ¥17,600,000、Indirect Cost: ¥5,280,000)
Fiscal Year 2015: ¥22,880,000 (Direct Cost: ¥17,600,000、Indirect Cost: ¥5,280,000)
Fiscal Year 2014: ¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
Fiscal Year 2013: ¥29,510,000 (Direct Cost: ¥22,700,000、Indirect Cost: ¥6,810,000)
|Outline of Final Research Achievements
Far-infrared (FIR) wavelength (30-200 um) is an important tool to study the formation of planets, stars and galaxies. Gallium doped germanium (Ge:Ga) extrinsic photo-conductors (PCs) and cryo-PMOS readout integrated circuits (ROICs) were used in the previous space infrared astronomical observatories. Development of FIR large format image sensor is difficult because of the following reasons: 1) Stress mechanism is required to extend the cut-off wavelength from that of Ge:Ga PC (120 um) to 200 um. 2) Large power consumption of the PMOS ROIC limits the number of pixel. 3) Thermal expansion mismatch between Ge detector and Si ROIC damages the In bump interconnection between them.
We have developed a large format 32x32 FIR image sensor by the following key technologies: 1) Ge:Ga blocked impurity band (BIB) detector, 2) fully-depleted silicon-on-insulator (FD-SOI) cryo-CMOS ROIC, 3) a thin Ge detector on a thick Si support substrate and hybridization by nano-particle deposition (NpD) Au-bump.