MOCVD/ゾルーゲル新規プロセス開発によるFeRAM用のPZT薄膜の合成とその特性

Research Project

Project/Area Number	00F00082
Research Category	Grant-in-Aid for JSPS Fellows
Allocation Type	Single-year Grants
Section	外国
Research Field	Inorganic materials/Physical properties
Research Institution	Tokyo Institute of Technology
Host Researcher	水谷惟恭
Foreign Research Fellow	BAO D.
Project Period (FY)	2000 – 2001
Project Status	Completed (Fiscal Year 2001)
Budget Amount *help	¥2,000,000 (Direct Cost: ¥2,000,000) Fiscal Year 2001: ¥1,000,000 (Direct Cost: ¥1,000,000) Fiscal Year 2000: ¥1,000,000 (Direct Cost: ¥1,000,000)