MOCVD/ゾルーゲル新規プロセス開発によるFeRAM用のPZT薄膜の合成とその特性

• Project/Area Number: 00F00082
• Research Category: Grant-in-Aid for JSPS Fellows
• Allocation Type: Single-year Grants
• Section: 外国
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tokyo Institute of Technology
• Host Researcher: 水谷 惟恭
• Foreign Research Fellow: BAO D.
• Project Period (FY): 2000 – 2001
• Project Status: Completed(Fiscal Year 2001)
• Budget Amount: ¥2,000,000 (Direct Cost : ¥2,000,000); Fiscal Year 2001 : ¥1,000,000 (Direct Cost : ¥1,000,000); Fiscal Year 2000 : ¥1,000,000 (Direct Cost : ¥1,000,000)