非接触評価に基づくシリコン表面および極薄絶縁膜/シリコン界面の制御と応用

• Project/Area Number: 00J06818
• Research Category: Grant-in-Aid for JSPS Fellows
• Allocation Type: Single-year Grants
• Section: 国内
• Research Field: Electronic materials/Electric materials
• Research Institution: Hokkaido University
• Principal Investigator: 吉田 俊幸
• Project Period (FY): 2000
• Project Status: Completed (Fiscal Year 2000)
• Budget Amount: ¥1,000,000 (Direct Cost: ¥1,000,000); Fiscal Year 2000: ¥1,000,000 (Direct Cost: ¥1,000,000)