化学ビーム成長GaInNAs/GaAs量子井戸の高品質化と面発光レーザへの応用

• Project/Area Number: 00J10143
• Research Category: Grant-in-Aid for JSPS Fellows
• Allocation Type: Single-year Grants
• Section: 国内
• Research Field: 電子デバイス・機器工学
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 影山 健生
• Project Period (FY): 2000
• Project Status: Completed (Fiscal Year 2000)
• Budget Amount: ¥1,000,000 (Direct Cost: ¥1,000,000); Fiscal Year 2000: ¥1,000,000 (Direct Cost: ¥1,000,000)