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化学ビーム成長GaInNAs/GaAs量子井戸の高品質化と面発光レーザへの応用
Research Project
All
Fiscal Year 2000
grantAwardInfo
Project/Area Number
00J10143
Research Category
Grant-in-Aid for JSPS Fellows
Allocation Type
Single-year Grants
Section
国内
Research Field
電子デバイス・機器工学
Research Institution
Tokyo Institute of Technology
Principal Investigator
影山 健生
Project Period (FY)
2000
Project Status
Completed (Fiscal Year 2000)
Budget Amount
*help
¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2000: ¥1,000,000 (Direct Cost: ¥1,000,000)