ダブルビーム光電流法による半導体表面準位・インターギャップ準位の特定

• Project/Area Number: 01750253
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Hokkaido University
• Principal Investigator: 安住 和久 北海道大学, 工学部, 助手
• Project Period (FY): 1989
• Project Status: Completed (Fiscal Year 1989)
• Budget Amount: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 1989: ¥800,000 (Direct Cost: ¥800,000)