混晶半導体中の複合欠陥に関する熱力学理論の確立並びに実験的検証

• Project/Area Number: 01750263
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: 市村 正也 名古屋工業大学, 工学部, 助手
• Project Period (FY): 1989
• Project Status: Completed (Fiscal Year 1989)
• Budget Amount: ¥1,000,000 (Direct Cost: ¥1,000,000); Fiscal Year 1989: ¥1,000,000 (Direct Cost: ¥1,000,000)